Package including a semiconductor die and a capacitive component

ABSTRACT

In one general aspect, a method can include forming a redistribution layer on a substrate using a first electroplating process, and forming a conductive pillar on the redistribution layer using a second electroplating process. The method can include coupling a semiconductor die to the redistribution layer, and can include forming a molding layer encapsulating at least a portion of the redistribution layer and at least a portion of the conductive pillar.

RELATED APPLICATIONS

This application is a continuation of U.S. Non-Provisional applicationSer. No. 14/092,485, entitled, “Methods and Apparatus Related to anImproved Package Including a Semiconductor Die,” filed Nov. 27, 2013,which claims priority to and the benefit of U.S. Provisional ApplicationNo. 61/813,514, entitled, “Methods and Apparatus Related to an ImprovedPackage Including a Semiconductor Die,” filed Apr. 18, 2013, both ofwhich are incorporated herein by reference in their entireties.

TECHNICAL FIELD

This description is associated with methods and apparatus related to animproved package including a semiconductor die.

BACKGROUND

As the world of electronics moves towards smaller sizes, higherefficiency, and lower cost, integration techniques are in great demandfor making smaller, more intelligent and more efficient products, in avariety of spaces including the power management space. The highestperformance devices, such as power devices, are often manufactureddiscretely as opposed to being integrated in an integrated circuit (IC)process. The cost of producing such discrete devices can be a fractionof those produced using such complex processes because the mask layersused in discrete devices are generally a fraction (e.g., one half, onethird) of the number of those used in more complex IC processes. Manyknown approaches have used, for example, lead-frame packages and copperclips to achieve integration, but the shortcomings of such packages havebeen higher cost, inferior thermal performance, higher inductance,larger size and generally a lower level of integration. Thus, a needexists for systems, methods, and apparatus to address the shortfalls ofpresent technology and to provide other new and innovative features.

SUMMARY

In one general aspect, a method can include forming a redistributionlayer on a substrate using a first electroplating process, and forming aconductive pillar on the redistribution layer using a secondelectroplating process. The method can include coupling a semiconductordie to the redistribution layer, and can include forming a molding layerencapsulating at least a portion of the redistribution layer and atleast a portion of the conductive pillar.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other features will beapparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram that illustrates a side cross-sectional view of adevice including several different components integrated into a package.

FIG. 2A is a side cross-sectional view of a device, or a portionthereof, according to an implementation.

FIG. 2B is side cross-sectional view of a variation of the device shownin FIG. 2A, or a portion thereof, according to an implementation.

FIG. 2C is side cross-sectional view of another variation of the deviceshown in FIG. 2A, or a portion thereof, according to an implementation.

FIG. 3A is a side cross-sectional view of another device, or a portionthereof, according to an implementation.

FIG. 3B is a side cross-sectional view of a variation of the deviceshown in FIG. 3A, or a portion thereof, according to an implementation.

FIG. 3C is a side cross-sectional view of another variation of thedevice shown in FIG. 3A, or a portion thereof, according to animplementation.

FIG. 4A is a top view of conductors within a winding of an inductivecomponent.

FIG. 4B is a top view of conductors within another winding of aninductive component.

FIG. 5A is a side cross-sectional view of yet another device, or aportion thereof, according to an implementation.

FIG. 5B is a diagram that illustrates an equivalent circuit of thecapacitive component and the semiconductor die shown in FIG. 5A.

FIG. 5C is a side cross-sectional view of a variation of a portion ofthe device shown in FIG. 5A.

FIGS. 6A through 6G are side cross-sectional views that illustrateformation of the device shown in, for example, FIGS. 3A through 3C,according to an implementation.

FIG. 7 is a diagram that illustrates a variation of the device shown inFIGS. 3A and 3B.

FIGS. 8A through 8H are diagrams that illustrate a perspective view offormation of a device.

FIGS. 9A and 9B illustrates cross-sectional views of the device shown inFIG. 8E.

FIG. 10 is a flowchart that illustrates a method for forming one or moreof the devices described herein.

FIG. 11A is a diagram that illustrates a side cross-sectional view of adevice coupled to an external block.

FIG. 11B is a bottom view of the device shown in FIG. 11A.

FIG. 12 is a diagram that illustrates a side cross-sectional view of avariation of the device shown in FIG. 1.

FIG. 13A is a diagram that illustrates a perspective view of a device,or a portion thereof, according to an implementation.

FIG. 13B is a diagram that illustrates a perspective view of the deviceshown in FIG. 13A with additional processing layers, according to animplementation.

FIG. 14A is a diagram that illustrates a layout view of the device shownin FIGS. 13A and 13B.

FIG. 14B illustrates a side cross-sectional view of the device shown inFIG. 14A along a line.

FIG. 14C illustrates a side cross-sectional view of the device shown inFIG. 14A along another line.

FIG. 15 is a diagram that illustrates the device shown, for example, inFIG. 1 included in a computing device.

DETAILED DESCRIPTION

FIG. 1 is a diagram that illustrates a side cross-sectional view of adevice 100 including several different components integrated into apackage. In some implementations, the device 100 can be referred to as apackaged device or can be referred to as a package. The device 100 canbe coupled to an external block 190 (e.g., a printed circuit board, alead frame) or another device (not shown).

As shown in FIG. 1, the device 100 includes a substrate 130 disposedbetween a molding layer 120 and a molding layer 140. In someimplementations, the substrate 130 can be referred to as aninter-molding substrate because the substrate 130 is disposed betweentwo different molding layers 120, 140. In some implementations, thesubstrate 130 can function as an insulator between the molding layers120, 140. In some implementations, the substrate 130 can function as astructural component for the device 100. In this implementation, severalsemiconductor die 142, 144 are disposed within the molding layer 140. Insome implementations, the molding layers 120, 140 can each be referredto as a molding without the term layer and/or can be referred to as amolding material. In some implementations, the molding material caninclude, or can be, a molding compound. Accordingly, one or more of themolding layers 120, 140 can include more than one type of material(e.g., a plastic, a resin, an epoxy, a phenolic hardener, a silicamaterial, a pigment, etc.) in the molding material.

As shown in FIG. 1, the molding layer 120, the substrate 130, themolding layer 140, and the external block 190 are stacked along adirection A1 (also can be referred to as a vertical direction). Themolding layer 120, the substrate 130, the molding layer 140, and theexternal block 190 can be referred to as being included in a verticalstack.

Each of the molding layer 120, the substrate 130, the molding layer 140,and the external block 190 are aligned along a direction A2 (also can bereferred to as a horizontal direction or as a lateral direction), whichis substantially orthogonal to the direction A1. The direction A2 isaligned along or parallel to a plane A4, along which the molding layers120, 140, the semiconductor die 142, 144, the substrate 130, and theexternal block 190 are also aligned. In some implementations, a portionof the device 100, or a direction away from the external block 190(substantially along the direction A1), can be referred to as topportion or an upward direction. In some implementations, a portion ofthe device 100, or a direction toward the external block 190(substantially along the direction A1), can be referred to as bottomportion or a downward direction. A direction A3 into the page (shown asa dot) is aligned along or parallel to the plane A4 and is orthogonal todirections A1 and A2. In the implementations described herein, thevertical direction is normal to a plane along which the substrate 130 isaligned (e.g., the plane A4). The directions A1, A2, and A3, and planeA4, are used throughout the various views of the implementationsdescribed throughout the figures for simplicity.

In this implementation shown in FIG. 1, the device 100 includes apassive component region 125 (also can be referred to as a passivedevice region) included in at least a portion of the molding layer 120,a passive component region 135 (also can be referred to as a passivedevice region) that is coupled to (e.g., uses, is on, is at leastpartially disposed within, is embedded within) at least a portion of thesubstrate 130, and an interconnection region 145 included in at least aportion of the molding layer 140. One or more components (e.g., passivedevices) that can be included in one or more of the passive componentregions 125, 135 can include, for example, a capacitive component (e.g.,a capacitor), an inductive component (e.g., an inductor, a transformer),a resistive component (e.g., a resistor), and/or so forth.

As a specific example, a capacitive component (not shown) can be formedusing at least a portion of the substrate 130 as an integral element(e.g., a dielectric) in the construction or formation of the capacitivecomponent. As another example, at least a portion of a capacitivecomponent (e.g., a thin-film capacitive component, a capacitivecomponent including a co-fired dielectric) can be embedded in thesubstrate 130.

As yet another specific example, one or more inductive components (notshown) can be formed in the passive component region 125 of the moldinglayer 120. Accordingly, the inductive component(s) can be included in atop portion of the device 100. In some implementations, the moldinglayer 120 can include, or can be, at least a portion of a magneticsubstance. Accordingly, one or more conductors can be combined with themagnetic substance to form the inductive component(s). In someimplementations, integration of one or more components including amagnetic substance in the molding layer 120 can be referred to asmagnetic integration.

Although not shown in FIG. 1, one or more electrical connections usingone or more conductors (e.g., vias) can be formed through the substrate130 to, for example, an inductive component included in the passivecomponent region 125 of the molding layer 120. For example, an inductivecomponent formed in the passive component region 125 of the moldinglayer 120 can be electrically connected to one or more of thesemiconductor die 142, 144, one or more components included in thepassive component region 135, and/or the external block 190 using one ormore vias through the substrate 130.

As another example, one or more capacitive components (not shown) can beformed in the passive component region 135 using the substrate 130.Accordingly, at least some portions of the capacitive component(s) canbe disposed in the molding layer 120 and/or the molding layer 140. As aspecific example, a capacitive component can include a first capacitiveplate (e.g., a conductive plate made of copper) disposed on a first sideof the substrate 130 in the molding layer 120, and can include a secondcapacitive plate disposed on a second side of the substrate 130 in themolding layer 140 and opposite the first side of the substrate 130. Atleast a portion of the substrate 130 disposed between the firstcapacitive plate and the second capacitive plate can function as adielectric for the capacitive component.

In some implementations, one or more components formed in the passivecomponent region 135 using the substrate 130 can be used for variousfunctions. For example, a capacitive component formed in the passivecomponent region 135 using the substrate 130 can be used for isolatingcommunication signaling between semiconductor devices included in thedevice 100. In some implementations, integration of one or morecomponents using the substrate 130 for communication isolation (e.g.,isolation at relatively high voltages) can be referred to as isolatedcommunication integration.

In some implementations, the substrate 130 can be made of materialconfigured to function as a dielectric at relatively high voltages(e.g., 100 V, 1000 V, 10,000 V). In some implementations, the substratecan be, or can include, an organic substrate, a polymer, a glass, and/orso forth. In some implementations, the substrate 130, can be, or caninclude, a ceramic material. In some implementations, the substrate 130can be, or can include, for example, aluminum nitride (AlN), siliconnitride (Si₃N₄), alumina (Al₂O₃) or a derivative thereof, FR4, BariumTitanate (BaTiO₃), and/or so forth. The ceramic material can have afavorable coefficient of thermal expansion (CTE) compared with, forexample, pure silicon. For example, a coefficient of the thermalexpansion of the ceramic material (or other substrate material) can besimilar a coefficient of the thermal expansion of silicon so that stresswithin the device 100 can be reduced at relatively high temperatures.

Although not shown in FIG. 1, one or more electrical connections usingone or more conductors (e.g., vias) can be formed through the substrate130 to, for example, a capacitive component included the passivecomponent region 135 of the molding layer 120. For example, thecapacitive component formed in the passive component region 135 can beelectrically connected to one or more of the semiconductor die 142, 144,one or more components included in the passive component region 125,and/or the external block 190 using one or more vias through thesubstrate 130.

The interconnection region 145 can include one or more interconnectioncomponents that can be, or can include, a combination of conductivecomponents that can be used to electrically interconnect portions of thedevice 100. The interconnection region 145 can include, for example, oneor more redistribution layers (RDLs) (not shown) and one or moreconductive pillars (not shown) coupled to the redistribution layer(s).The redistribution layer(s) and/or the conductive pillar(s) can beformed using a variety of processing techniques including depositionprocessing techniques, electroplating processing techniques, electrolessplating processing techniques, and/or so forth. The interconnectioncomponents included in the interconnection region 145 can be coupled toone or more input pins and/or one or more output pins for the device100.

As mentioned above, the interconnection components included in theinterconnection region 145 can be used to electrically interconnectportions of the device 100 such as semiconductor devices included in oneor more of the semiconductor die 142, 144. One or more of thesemiconductor die 142, 144 can be electrically coupled to one or morepassive components included in one or more of the passive componentregions 125, 135 via one or more conductive components included in theinterconnection region 145. In some implementations, one or moreconductive components included in the interconnection region 145 can beused to electrically couple one or more passive components included inone or more of the passive component regions 125, 135 with the externalblock 190.

In some implementations, one or more of the semiconductor die 142, 144can include a variety of semiconductor devices. For example, one or moreof the semiconductor die 142, 144 can be, or can include, a discretesemiconductor device. Specifically, one or more of the semiconductor die142, 144 can be, or can include, a laterally-oriented transistor device(e. g., a lateral metal-oxide-semiconductor field-effect transistor(MOSFET) device) and/or a vertically-oriented transistor device (e.g., avertical MOSFET device). In some implementations, one or more of thesemiconductor die 142, 144 can be, or can include, a bipolar junctiontransistor (BJT) device, a diode device, an insulated-gate bipolartransistor (IGBT) device, and/or so forth. In some implementations, oneor more of the semiconductor die 142, 144 can be, or can include, acircuit such as a filter circuit, a controller circuit, a drivercircuit, a communication circuit (e.g., a receiver and/or transmitter),and/or so forth. In some implementations, one or more of thesemiconductor die 142, 144 can be, or can include special purpose logiccircuitry, combinational logic, a field programmable gate array (FPGA),an application-specific integrated circuit (ASIC). Although not shown inFIG. 1, in some implementations, one or more semiconductor die (similarto one or more of the semiconductor die 142, 144) can be included in themolding layer 120. In some implementations, semiconductor die 142 and/orsemiconductor die 144 can instead be a module (e.g., a discrete devicemodule, a packaged device module).

In some implementations, the device 100 can be used for many differenttypes of systems such as power management systems, radio frequency (RF)systems, controller systems, computing systems, digital and/or analogsystems, etc. In some implementations, the device 100 can also be usedfor providing low cost and effective fan-out where the number of pinsexceeds what the silicon die size and desired pitch can accommodate for.

As shown in FIG. 1, a variety of packaging technologies and techniquesare heterogeneously integrated into the device 100 within the passivecomponents regions 125, 135, the interconnection region 145, and otherportions of the device 100. Passive components can be integrated intoand operated within the device 100 for improved electrical/thermalperformance, and reduced overall size, cost, and package impedance.

One or more of the passive component regions 125, 135, and/or theinterconnection region 145 are illustrated as being included in specificportions of the device 100 by way of example only. In someimplementations, additional passive component regions and/orinterconnection regions can be included within the device 100. In someimplementations, the passive component regions and/or interconnectionregions can be electrically coupled and/or isolated using one or moreinsulators.

Accordingly, one or more of the passive component regions 125, 135and/or the interconnection region 145 can be included in differentlocations within the device 100. For example, the passive componentregion 125 can be disposed above the passive component region 135. Insome implementations, the interconnection region 145 can be disposedbetween the semiconductor die 142 and the semiconductor die 144. In someimplementations, the interconnection region 145 (or an additionalinterconnection region) can be included in the molding layer 120.

As discussed in more detail below, a variety of combinations ofintegration can be included in the device 100. In some implementations,one or more different types of integration can be excluded from thedevice 100. For example, a variation of the device 100 can include thepassive component region 135 and the interconnection region 145, butexclude the passive component region 125. As another example, avariation of the device 100 can include the passive component region 125and the interconnection region 145, but can exclude the passivecomponent region 135. As yet another example, a variation of the device100 can include the passive component region 125, but exclude thepassive component region 135 and the interconnection region 145.

As noted above, the external block 190 can be, for example, a leadframe, a package, and/or so forth. In some implementations, the device100 (and variations thereof described below) can be coupled to a varietyof other components. For example, the device 100 can be coupled toanother device similar to the device 100. In some implementations, thedevice 100 can be molded into another component or circuit. In someimplementations, the device 100 can be coupled via one or more wirebonds or other conductive components to the external block 190.

The device 100 shown in FIG. 1 can be produced using a variety ofprocessing techniques. For example, the elements included on one side ofthe substrate 130 can be produced concurrently with the elementsincluded on the other side of the substrate 130. For example, one ormore portions of the passive component region 125 can be concurrentlyformed with one or more portions of the interconnection region 145and/or the passive component region 135. In contrast, one or moreportions of the passive component region 125 can be formed before orafter one or more portions of the interconnection region 145 and/or thepassive component region 135 are formed. More details related toprocessing operations that can be used to produce the device 100 (and/orvariations thereof) are discussed below in connection with, for example,FIGS. 6A through 6G, 8A through 8H, and so forth. More details relatedto the device 100 shown in FIG. 1 and variations thereof are shown anddescribed in connection with FIGS. 2A through 14C.

FIG. 2A is a side cross-sectional view of a device 200, or a portionthereof, according to an implementation. As shown in FIG. 2A, the device200 includes a plurality of interconnection components 250 coupled to asubstrate 230. In this implementation, several of the interconnectioncomponents 250 are defined by portions of a redistribution layer 252(which can be referred to as redistribution layer portions, or ascontacts of the redistribution layer) and conductive pillars 254. Inthis implementation, the redistribution layer 252 is disposed betweenthe substrate 230 and the conductive pillars 254 (which can be referredto as a conductive pillar layer). One or more portions of theinterconnection components 250 can be included within an interconnectionregion (e.g., interconnection region 145 shown in FIG. 1). In thisimplementation, although the cross-section is cut along direction A2,one or more of the features can be included in a cross-section cut alongdirection A3.

As shown in FIG. 2A, the interconnection components 250 andsemiconductor die 242, 244, and 246 are disposed within a molding layer240 of the device 200. In other words, the interconnection components250 (or portions thereof) and semiconductor die 242, 244, and 246 are atleast partially disposed within the molding layer 240. In someimplementations, the interconnection components 250 and/or semiconductordie 242, 244, and/or 246 can be entirely disposed within or encapsulatedwithin the molding layer 240. The molding layer 240 is a relatively (orsubstantially) flat layer that has a surface 241 aligned along (e.g.,substantially aligned along) a plane B1, and a surface 243 (e.g., anopposite surface) aligned along (e.g., substantially aligned along) aplane B2. In some implementations, one or more of the semiconductor die242, 244, and/or 246 can instead be a module (e.g., a discrete module, apackaged module).

In this implementation, a surface plating layer 256 is disposed alongthe plane B1. Portions of the surface plating layer 256 (which can bereferred to as surface plating layer portions) are disposed between theinterconnection components 250 (e.g., ends of the interconnectioncomponents 250) and an external block 290. Also, portions of the surfaceplating layer 256 are disposed between the semiconductor die 244 and theexternal block 290. In some implementations, portions of the surfaceplating layer 256 can function as an interface or coupling conductorbetween the interconnection components 250 and/or the semiconductor die244 and the external block 290. In this example implementation, thesurface plating layer 256 is insulated from the semiconductor die 242 bythe molding layer 240.

In this implementation, the interconnection components 250 include atleast interconnection components 250A through 250F. Portions of theredistribution layer 252, conductive pillars 254, surface plating layer256, and/or so forth associated with each of the interconnectioncomponents 250 can generally be labeled with the identifiers A throughF. For example, interconnection component 250C includes a redistributionlayer portion 252C that is coupled to the substrate 230 and alsoincludes a conductive pillar 254C coupled to the redistribution layerportion 252C. Accordingly, the conductive pillar 254C is disposedbetween the substrate 230 and the redistribution layer portion 252C.

As shown in FIG. 2A, the redistribution layer 252 has a verticaldimension B3 (along the vertical direction), and the conductive pillars254 have a vertical dimension B4 (along the vertical direction). In thisimplementation, the vertical dimension B3 of the redistribution layer252 is less than (e.g., thinner) than the vertical dimension B4 of oneor more of the conductive pillars 254. In some implementations, thevertical dimension B3 of the redistribution layer 252 can be equal to,or greater than (e.g., thicker than), the vertical dimension B4 of oneor more of the conductive pillars 254. In some implementations, thevertical dimensions can also be referred to as heights or thicknesses.In some implementations, one or more of the conductive pillars 254 canbe referred to as functioning as an electrical interconnect between theexternal block 290 and the redistribution layer 252.

The interconnection components 250 can have a variety of configurationsand functions. For example, the interconnection component 250A includesa redistribution layer portion 252A coupled to a pair of conductivepillars 254A-1 and 254A-2. The redistribution layer portion 252A has alateral dimension (which can be measured along the direction A2 and cangenerally be referred to as a horizontal dimension, a width or a length)that is greater than a lateral dimension (which can be measured alongthe direction A2) of each of the conductive pillars 254A-1 and 254A-2.In this implementation, the lateral dimension of the redistributionlayer portion 252A and the lateral dimension of each of the conductivepillars 254A-1 and 254A-2 can be substantially uniform (e.g., constant)along the vertical direction A1. In some implementations, a lateraldimension along direction A3 of the redistribution layer portion 252Acan be different than a lateral dimension along direction A3 of one ormore of the conductive pillars 254A-1 and 254A-2.

The interconnection component 250A extends between the plane B1 and theplane B2, so that the interconnection component 250A has a first enddirectly coupled to the substrate 230 and a second end directly coupledto the surface plating layer 256. As shown in FIG. 2A, several of theinterconnection components 250 extend between the plane B1 and the planeB2, so that the interconnection components 250 have first ends directlycoupled to the substrate 230 and second ends directly coupled to thesurface plating layer 256.

As another example, the interconnection component 250B includes aredistribution layer portion 252B coupled to a conductive pillar 254B.In this interconnection component 250B, the lateral dimension of theredistribution layer portion 252B is approximately equal to a lateraldimension of the conductive pillar 254B. Accordingly, theinterconnection component 250B has a substantially uniform (e.g.,constant) lateral dimension along the vertical direction A1. In someimplementations, the lateral dimension of the interconnection component250B can vary (e.g., taper) along the vertical direction from plane B1to plane B2, or vice versa.

As another example, the interconnection component 250C includes aredistribution layer portion 252C coupled to a conductive pillar 254C.In this interconnection component 250C, the lateral dimension (e.g.,width) of the redistribution layer portion 252C (or a portion thereof)is greater than a lateral dimension of the conductive pillar 254C.

As shown in FIG. 2A, the interconnection component 250D includes aredistribution layer portion 252D. The interconnection component 250D isdirectly coupled to the semiconductor die 246. Specifically, theinterconnection component 250D can be coupled to one or more conductorsincluded in the semiconductor die 246. In this embodiment, multipleinterconnection components, in addition to interconnection component250D, are coupled to the semiconductor die 246 (e.g., disposed betweenthe semiconductor die 246 and the substrate 230).

Interconnection component 250E includes a redistribution layer portion252E and a conductive pillar 254E. The conductive pillar 254E is coupledto a surface plating layer portion 256E. As shown in FIG. 2A, inaddition to being coupled to the interconnection component 250E, thesurface plating layer portion 256E is coupled to a bottom surface of thesemiconductor die 244 (e.g., a bottom portion of the semiconductor die244). In some implementations, the bottom surface of the semiconductordie 244 coupled to the surface plating layer portion 256E can beassociated with a drain portion of a vertical semiconductor device(e.g., a vertical MOSFET device) included in the semiconductor die 244.Accordingly, the interconnection component 250E can be electricallycoupled to the drain portion (or contact) of the vertical semiconductordevice via the surface plating layer portion 256E. A source portion (orcontact) of the vertical semiconductor device can be disposed on anopposite side (e.g., a top surface) of the semiconductor die 244.

Interconnection component 250F includes a redistribution layer portion252F and a conductive pillar 254F. As shown in FIG. 2A, in addition tobeing coupled to the interconnection component 250E, the redistributionlayer portion 252F is coupled to a top surface of the semiconductor die242. In some implementations, the redistribution layer portion 252F canbe electrically coupled to a semiconductor device (e.g., alaterally-oriented semiconductor device such as a lateral-type MOSFETdevice) included in the semiconductor die 242. In this implementation,the external block 290 (or a portion thereof) can be electricallycoupled via the interconnection component 250F to the top surface of thesemiconductor die 242 opposite a bottom surface of the semiconductor die242, which is facing the external block 290.

In some implementations, the redistribution layer 252, the conductivepillars 254, and/or the surface plating layer 256 can be formed of ametal such as titanium, copper, aluminum, and/or so forth. In someimplementations, the conductive pillars 254 can include, or can beformed using, for example, nano-particle copper bonding. In someimplementations, the redistribution layer 252 and/or one or more of theconductive pillars 254 can be formed using, for example, anelectroplating process. The surface plating layer 256, similarly, can beformed of a metal and can be formed using an electroplating process. Insome implementations, the surface plating layer 256 can be formed using,for example, a sputtering process (e.g., a titanium/copper sputteringprocess).

As shown in FIG. 2A, the interconnection components 250 are formed usingtwo layers of conductors—the redistribution layer 252 and the conductivepillars 254. In some implementations, one or more of the interconnectioncomponents 250 can be formed using more than two layers of conductors.For example, an interconnection component can include a redistributionlayer, a first conductive pillar layer coupled to the redistributionlayer, and a second conductive pillar layer coupled to the firstconductive pillar layer so that the first conductive pillar layers aredisposed between the redistribution layer and the second conductivepillar layer.

FIG. 2B is a side cross-sectional view of variation of the device 200shown in FIG. 2A, or a portion thereof. In this implementation, theredistribution layer 252 is a first redistribution layer 252 and thedevice 200 includes a second redistribution layer 253. Portions of thefirst redistribution layer 252 can be referred to as firstredistribution layer portions (e.g., first redistribution layer portion252G) and portions of the second redistribution layer 252 can similarlybe referred to as second redistribution layer portions. In thisimplementation, the second redistribution layer 253 includes a secondredistribution layer portion 253A and a second redistribution layerportion 253B. In some implementations, the second redistribution layerportion 253A can be a first portion 253A of the second redistributionlayer 253 and the second redistribution layer portion 253B can be asecond portion 253B of the second redistribution layer 253.

The second redistribution layer 253 can have a surface area (e.g.,footprint or outer profile when view in a plan view or along directionA1) that is different than (e.g., smaller than, greater than) a surfacearea (e.g., footprint or outer profile when view in a plan view or alongdirection A1) of the first redistribution layer 252. In someimplementations, the second redistribution layer 253 can have a surfacearea (or footprint) that is equal to or the same as a surface area (orfootprint) of the first redistribution layer 252. In someimplementations, the second redistribution layer 253 can have a patternthat is different (e.g., higher density, offset in some dimensions,lower density, different shapes) than a pattern of the firstredistribution layer 252. In some implementations, the secondredistribution layer 253 can have a pattern that is equal to or the sameas a pattern of the first redistribution layer 252.

As shown in FIG. 2B, the second redistribution layer portion 253B isdisposed between the first redistribution layer 252 and thesemiconductor die 244. In this implementation, the second redistributionlayer portion 253A is disposed between the first redistribution layerportion 252E and the conductive pillar 254E. Accordingly, the secondredistribution layer 253 (or a portion thereof) is disposed between thefirst redistribution layer 252 and the conductive pillars 254.

In this implementation, the second redistribution layer portion 253B isassociated with specific elements of the device 200. Specifically, thesecond redistribution layer portion 253B is associated with thesemiconductor die 244 and with the first redistribution layer portion252G. The second redistribution layer portion 253A, similarly, isassociated with specific elements of the device 200. Specifically, thesecond redistribution layer portion 253A is associated with theconductive pillar 254E and the first redistribution layer portion 252E.

In some implementations, the second redistribution layer 253, or aportion thereof, can be associated with more than one or two elements(e.g., a die and a conductive pillar). In some implementations, multipleportions of the second redistribution layer 253 can be associated with asingle element (e.g., a die, a module, a pillar).

As shown in FIG. 2B, the first redistribution layer portion 252E, thesecond redistribution layer portion 253A, and the conductive pillar 254E(and the surface plating layer portion 256E) define a stack (e.g., avertical stack). In contrast, the first redistribution layer portion252F and the conductive pillar 254F define a stack (e.g., a verticalstack) without an intervening second redistribution layer, or portionthereof.

In this implementation, the first redistribution layer 252 and thesecond redistribution layer portion 253B can have a vertical dimensionB5 (or thickness) that is greater than the vertical dimension B3 of thefirst redistribution layer 252 alone. In some implementations, avertical dimension of one portion of the first redistribution layer 252can be different than a vertical dimension of another portion of thefirst redistribution layer 252. Accordingly, although not shown, in someimplementations, the vertical dimension B3 of, for example, theredistribution layer portion 252D can be equal to or greater than thevertical dimension B5 of the combination of the redistribution layerportion 252F and the second redistribution layer portion 253B.

In some implementations, rather than being constant or uniform, thesecond redistribution layer 253 can have a first portion with a verticaldimension different than (e.g., less than, greater than) a secondportion of the second redistribution layer 253. For example, the secondredistribution layer portion 253A can have a vertical dimensiondifferent than a vertical dimension of the second redistribution layerportion 253B.

In this implementation, a vertical dimension B6 of the secondredistribution layer 253 is less than the vertical dimension B3 of thefirst redistribution layer 252. In some implementations, the verticaldimension B6 of the second redistribution layer 253 can be greater thanor equal to the vertical dimension B3 of the first redistribution layer252.

In some implementations, a vertical dimension of a redistribution layercan be defined so that a distance between a surface of an element withrespect to the substrate 230 can be defined. For example, the verticaldimension B6 of the redistribution layer 253 can be defined so that thecombined vertical dimension B5 results in a surface (e.g., a bottomsurface, a top surface) of semiconductor die 244 being a specifieddistance from the substrate 230. Accordingly, the vertical dimension B6of the redistribution layer 253 can be defined so that the combinedvertical dimension B5 results in the surface of semiconductor die 244being farther from the substrate 230 or closer to the external block290.

In some implementations, vertical dimensions (or thicknesses) ofmultiple redistribution layers can be defined so that a first distancebetween a surface of a first element with respect to the substrate 230can be defined relative to a second distance between a surface of asecond element with respect to the substrate 230. For example, as shownin FIG. 2B, a stack including the first distribution layer portion 252G,the second distribution layer portion 253B and the semiconductor die 244can have a vertical dimension (or thickness) (not labeled) that isgreater than a vertical dimension (not labeled) of a stack including thefirst distribution layer portion 252F and the semiconductor die 242.Accordingly, a bottom surface of the semiconductor die 244 can befarther from the substrate 230 (and the semiconductor die 244 can bethinner) than would be possible without the second distribution layerportion 253B.

Although not shown, in some implementations a second redistributionlayer can be defined (e.g., between first redistribution layer 252 andsemiconductor die 242) so that a distance between the bottom surface ofthe semiconductor die 242 and the substrate 230 can be closer to adistance between a bottom surface of the semiconductor die 244 and thesubstrate 230 than without the second distribution layer 253 (or portionthereof). This can be achieved despite differences in verticaldimensions (or thicknesses) of the semiconductor die 242 and thesemiconductor die 244. In some implementations, use of the secondredistribution layer 253 can enable differences in vertical dimensions(or thicknesses) of the semiconductor die 242 and the semiconductor die244 (or other components). This manipulation of distances can facilitatethe packaging process and encapsulation or at least partial covering (oraround) using, for example, the molding layer 240.

In some implementations, a vertical dimension of a redistribution layercan be defined so that a thickness of an element (with respect toanother element) can be defined. For example, the vertical dimension orthickness of semiconductor die 244 can be defined so that the verticaldimension or thickness of semiconductor die 244 shown in FIG. 2B can beless than the vertical dimension or thickness of semiconductor die 244shown in FIG. 2A. Also, the use of the second redistribution layer 253can enable a decrease in the thickness of the semiconductor die 244shown in FIG. 2B with the semiconductor die 244 still being in contactwith (or exposed to) the surface plating layer 256. This can be achievedwith the overall thickness of the device 200 remaining unchanged, andwith the surface of the semiconductor die 244 being plated with thesurface plating layer 256. In other words, the second redistribution 253can function as a spacer that can compensate for (or allow for) athinner semiconductor die 244 (which can be a discrete device such as aMOSFET device). The thinner semiconductor die 244 may be desirable forperformance purposes of the semiconductor die 244. In someimplementations, the vertical dimension or thickness of semiconductordie 244 can be less than or equal to the vertical dimension or thicknessof semiconductor die 242 (which is buried in this implementation). Insome implementations, the vertical dimension or thickness ofsemiconductor die 244 can be greater than the vertical dimension orthickness of semiconductor die 242.

Although not shown in FIG. 2B, more than two redistribution layers canbe included in the device 200. Two or more of the more than tworedistribution layers can have the same or different vertical dimensionsor thicknesses.

FIG. 2C is side cross-sectional view of another variation of the device200 shown in FIG. 2A, or a portion thereof, according to animplementation. As shown in FIG. 2C, the redistribution layer 252 is afirst redistribution layer 252 and the device 200 includes a secondredistribution layer 257. Portions of the first redistribution layer 252can be referred to as first redistribution layer portions (e.g., firstredistribution layer portion 252F) and portions of the secondredistribution layer 257 can similarly be referred to as secondredistribution layer portions. In this implementation, the secondredistribution layer 257 includes second redistribution layer portions257A through 257E.

In this variation of the device 200, the first redistribution layerportions 257C through 257E are coupled to the second redistributionlayer portion 252D. Accordingly, a width (or lateral dimension (e.g.,lateral cross-sectional dimension)) of each of the second redistributionlayer portions 257C through 257E is less than a width of the firstredistribution layer portion 252D. The first redistribution layerportions 257A through 257E can be configured to match or correspond witha contact pattern of the semiconductor die 246.

The second redistribution layer 257 can be defined to facilitatecoupling of (e.g., bonding of) the semiconductor die 246 within thedevice 200. For example, the aspect ratio (or dimensions) of theportions 257A through 257E can be configured to facilitate soldering(through surface tension of the solder) of the semiconductor die 246 tothe second redistribution layer 257. In some implementations, relativelysmall aspect ratios (or dimensions) of the second distribution layerportions 257A through 257E can enable soldering without shorting betweenthe portions 257A through 257E. The first redistribution layer 252 canhave dimensions that can facilitate current flow or current conduction(e.g., low resistance) given that the dimensions of the secondredistribution layer portions 257A through 257E can be relatively small(and resistive).

In addition, the vertical dimension B3 (or thickness) of the firstredistribution layer 252 can be greater than a vertical dimension B7 (orthickness) of the second redistribution layer 257. The verticaldimension B3 of the first redistribution layer 252 can be greater thanthe vertical dimension B7 of the second redistribution layer 257 tofacilitate current flow (e.g., low resistance) relative to the secondredistribution layer 257. In some implementations, the verticaldimension B3 of the first redistribution layer 252 can be less than orequal to the vertical dimension B7 of the second redistribution layer257.

The second redistribution layer 257 can be defined to eliminate waferlevel processing associated with the semiconductor die 246. For example,in some implementations, the semiconductor die 246, during wafer levelprocessing, can include multiple different layers including, forexample, solder and conductive pillars. Forming the secondredistribution layer 257 on the first redistribution layer 252 caneliminate (or reduce) the need to form one or more of the multipledifferent layers at the wafer level including, for example, theconductive pillars. In some implementations, the features illustrated inFIG. 2B can be combined with the features included in FIG. 2C.

In some implementations the vertical dimension B3 and/or the verticaldimension B7 can be relatively thin to accommodate a relatively thicksemiconductor die. For example, the vertical dimension B3 of the firstredistribution layer 252 and/or the vertical dimension B7 of the secondredistribution layer 254 can be relatively thin so that thesemiconductor die 246 can be thicker than shown in, for example, FIGS.2A through 2C.

FIG. 3A is a side cross-sectional view of another device 300, or aportion thereof, according to an implementation. As shown in FIG. 3A,the device 300 includes an inductive component 370 disposed within amolding layer 360 on side C1 (e.g., a first side) of a substrate 330.Interconnection components 350 and semiconductor die 342, 344 aredisposed within a molding layer 340 on side C2 (e.g., a second side) ofthe substrate 330 of the device 300. Accordingly, the device 300includes magnetic integration on side C1 of the substrate 330 andinterconnection integration on side C2 of the substrate 330. In someimplementations, interconnection integration can be excluded so that astand-alone inductive component can be formed using magneticintegration.

The use of magnetic integration within the device 300 can reduce theoverall size and complexity of the device 300 in a desirable fashion. Insome power conversion circuits, for example, the use of inductivecomponents (e.g., magnetic components) such as inductors andtransformers is relatively common. However, by providing in-packagemagnetics integrated within the device 300 as described herein, theoverall solution size is reduced while performance, cost and complexitycan all be improved in a desirable fashion.

Several of the interconnection components 350 in the device 300 aredefined by portions of a redistribution layer 352 (which can be referredto as redistribution layer portions) and conductive pillars 354. One ormore portions of the interconnection components 350 can be includedwithin an interconnection region (e.g., interconnection region 145 shownin FIG. 1). In FIG. 3A, a surface plating layer 356 is disposed betweenthe device 300 and an external block 390.

The inductive component 370 can include several layers of conductorsembedded within the molding layer 360. Specifically, the inductivecomponent 370 can include a bottom redistribution layer 372, conductivepillars 374 (which can be referred to as a conductive pillar layer), anda top redistribution layer 376. Accordingly, the conductive pillars 374can be disposed between the bottom redistribution layer 372 and the topredistribution layer 376. The bottom redistribution layer 372, theconductive pillars 374, and the top redistribution layer 376 cancollectively define a winding 371 of the inductive component 370.Portions of the winding 371 of the inductive component 370 that are outof plane of the cross-sectional plane of the device 300 are shown inthis embodiment with dashed lines.

At least a portion 361 of the molding layer 360 can include a magneticsubstance that functions as a magnetic core of the inductive component370. In some implementations, the portion 361 of the molding layer 360that functions as a magnetic core can be referred to as a magnetic coreportion. Thus, the winding 371 defined by the inductive component 370can be disposed around the magnetic core portion of the molding layer360.

The magnetic substance included in the portion 361 of the molding layer360 (which functions as a magnetic core) can include, for example, aferromagnetic material, a magnetized nano-particle material, a metal(e.g., Iron, Zinc, Cobalt, Manganese), and/or so forth. In someimplementations, the magnetic substance can be embedded within (e.g.,suspended within) the molding layer 360. In some implementations, ifusing a nano-particle material, the nano-particles can be coated in aninsulating material, such as carbon, so that each of the nano-particlescan be substantially isolated from other nano-particles. In someimplementations, the nano-particles can have a size (e.g., an averagesize, a target size) between approximately 10 nanometers (nm) to 100 nm(e.g., 40 nm, 50 nm, 75 nm). In some implementations, the nano-particlescan have a size (e.g., an average size, a target size) less than 10 nmand/or greater than 100 nm.

Nano-particles can be used to form a relatively efficient magnetic core.In some implementations, nano-particles used as a magnetic core can haveadvantages over, for example, conventional ferrite materials in terms ofenergy density. This can result in a relatively large inductance in asmall volume through the use of relatively high number of turns withinthe winding 371. The winding 371 can incorporate a relatively highnumber of turns with relatively low impedance, which can result in arelatively efficient inductor and/or transformer.

In some implementations, the portion 361 of the molding layer 360 can beformed using sputtering techniques, deposition techniques, moldingtechniques, vaporized substances, liquid mixtures that includenanoparticles, and/or so forth. In some implementations, magnetic forcescan be used to separate substances (e.g., magnetic substances ormixtures) that are used to form the portion 361 of the molding layer360.

In some implementations, a magnetic substance can be formed intonano-particles in a deposition chamber, such as a sputtering chamber. Insome implementations, nano-particles can be the starting structuralbasis of a magnetic substance used to form the portion 361 of themolding layer 360.

In some implementations, the portion 361 of the molding layer 360 caninclude a variety of concentrations of magnetic substances (e.g.,nano-particles). For example, the portion 361 of the molding layer 360can include a magnetic substance with a concentration (e.g., a gradedconcentration) that varies with depth (along the vertical direction A1)or along a horizontal direction (along the horizontal directions A2and/or A3). In some implementations, a concentration of magneticsubstance within the portion 361 can be greater than or equal to 50%(e.g., 60%, 75%, 90%, 99%, 100%) in some implementations, theconcentration of nano-particles within the portion 361 of the moldinglayer 360 can be less than 50%.

In some implementations, the portion 361 of the molding layer 360 caninclude multiple layers (e.g., sub layers) of materials. For example,the portion 361 can include alternating layers (or interleaved layers)of magnetic material (e.g., a material including a magnetic substance)and non-magnetic material (e.g., an isolation layer). In someimplementations, eddy currents that can be created during formation canbe substantially reduced by forming the portion 361 of the molding layer360 incrementally in layers with an isolation layer between magneticlayers.

As mentioned above, the molding layer 360 can include multiple layers(or sub-layers) of molding or multiple portions of molding layer 360.For example, the bottom redistribution layer 372 can be disposed withina first portion (or first sub-layer) of the molding layer 360, theconductive pillars 374 can be disposed in a second portion (or secondsub-layer) of the molding layer 360, and the top redistribution layer376 can be disposed in a third portion (or third sub-layer) of themolding layer 360. In some implementations, the first portion, thesecond portion, and/or the third portion of the molding layer 360 can bemade of the same material. In some implementations, one or more of thefirst portion, the second portion, or the third portion of the moldinglayer 360 can be made of different materials. In some implementations,one or more of the first portion, the second portion, or the thirdportion of the molding layer 360 can be formed using different processesand/or using different processing steps.

For example, the first portion of the molding layer 360 can be formed ofa material that excludes a magnetic substance during a first processingstep, and the second portion of molding layer 360 can be formed of amaterial including a magnetic substance during a second processing step(subsequent to the first processing step). The third portion of themolding layer 360 can be formed of the same material of the firstportion or the second portion during a third processing step. In someimplementations, the third portion of the molding layer 360 can beformed of a different material than is used for the first portion and/orthe second portion.

In some implementations, first, second, and third portions of themolding layer 360 can be formed in a serial fashion. For example, thefirst portion of the molding layer 360 can be formed in conjunction withthe formation of the bottom redistribution layer 372, the second portionof the molding layer 360 can be formed in conjunction with the formationof the conductive pillars 374, and the third portion of the moldinglayer 360 can be formed in conjunction with the formation of the topredistribution layer 376. More details related to formation of aninductive component are discussed below.

FIG. 4A is a top view of conductors within a winding 471 of an inductivecomponent. The winding 471 is illustrated without a molding layerdisposed around the winding 471 so that the conductors included in thewinding 471 can be readily illustrated. The winding 471 shown in FIG. 4Acan be similar to the winding 371 shown in FIG. 3A or FIG. 3B. As shownin FIG. 4A, the winding 471 includes conductors included within a bottomredistribution layer 462 (shown with cross-hatched lines), conductivepillars 464, and conductors included within a top redistribution layer466 (shown with slanted lines).

A variety of configurations of windings can be formed within aninductive component different than that shown in FIG. 4A. For example, awinding can be formed using conductors within a redistribution layerhaving one or more right angles, one or more curved portions, and/or soforth. In some implementations, windings can have a spiral shape or ahelical shape along a vertical axis (e.g., along direction A1 shown inFIG. 3A or FIG. 3B) and/or lateral axis (along direction A2 or A3 asshown in FIG. 3A or FIG. 3B).

Referring back to FIG. 3A, in some implementations, the portion 361 ofthe molding layer 360 can have an overall lateral dimension (alongdirection A2 and/or A3) that is greater than a lateral dimension (alongdirection A2 and/or A3) of the winding 371. In some implementations, theportion 361 of molding layer 360 can have a lateral dimension (alongdirection A2 and/or A3) that is less than or equal to a lateraldimension (along direction A2 and/or A3) of the winding 371. Inimplementations where the portion 361 extends beyond the winding 371 inlateral dimension, a magnetic loop can be closed and flux lines can bemaintained within the portion 361, which can be desirable.

Although not shown in FIG. 3A, in some implementations, more than onewinding (similar to winding 371) can be formed within the molding layer360. In some implementations, the multiple windings can be electricallycoupled to each other. In some implementations, the windings can bemagnetically coupled (e.g., via a magnetic flux) to form, for example, atransformer. The windings can be placed adjacent to one another aroundadjacent magnetic core portions such that flux lines respectivelyassociated with the windings can pass through one another while beingrelatively electrically isolated. In some implementations, the windingscan be insulated both electrically and magnetically from one another.Although not shown, in some implementations, electrical isolationbetween windings can be achieved by disposing a first winding (andmagnetic core) on side C1 of the substrate 330 and a second winding (andmagnetic core) on side C2 of the substrate 330. Accordingly, flux linesfrom, for example, the first winding can pass through the substrate 330and can pass through the second winding (and magnetic core).

In some implementations, multiple windings can be formed so that atleast some portions of the windings are lateral to one another withinthe same horizontal plane (e.g., plane A4). In some implementations,multiple windings can be formed vertically on top of one another so thatthe multiple windings are vertically stacked along vertical directionA1.

In this implementation shown in FIG. 3A, the winding 371 is electricallycoupled to the interconnection component 350A and the interconnectioncomponent 350B through substrate via 331 and substrate via 332 (also canbe referred to as conductive vias). The substrate vias 331, 332 areformed through the substrate 330. The substrate via 331 and thesubstrate via 332 can include a conductive material such as a metal. Inthis implementation, the winding 371 is electrically coupled using theinterconnection components 350A, 350B and the substrate vias 331, 332 tothe external block 390. In some implementations, the winding 371 can beelectrically coupled to one or more components included in the moldinglayer 340 and/or the molding layer 360. For example, in someimplementations, the winding 371 can be electrically coupled to one ormore semiconductor die included in the molding layer 340 and/or themolding layer 360.

The conductive pillars 374 can have a vertical dimension C3 (along thevertical direction A1), which can be referred to as a thickness orheight, that is greater than a vertical dimension C4 of the bottomredistribution layer 372 and greater than a vertical dimension C5 of thetop redistribution layer 376. In some implementations, the verticaldimension C3 can be equal to or less than the vertical dimension C4and/or equal to or less than the vertical dimension C5. The verticaldimension C4 of the bottom redistribution layer 372 and/or the verticaldimension C5 of the top redistribution layer 376 can be the same as ordifferent than (e.g., greater than, less than) a vertical dimension C6of the redistribution layer 352. The vertical dimension C3 of theconductive pillars 374 can be the same as or different than (e.g.,greater than, less than) a vertical dimension C7 of the conductivepillars 354.

In some implementations, if the device 300 includes multiple windings,two or more of the multiple windings can have the same or differentnumbers of turns. For example, a first winding can have a first numberof turns, and a second winding can have a second number of turnsdifferent than the first number of turns. Also, two or more of themultiple windings can have the same or different dimensions (e.g.,heights (overall heights), lateral dimensions (overall lateraldimensions), lengths (overall lengths), conductor cross-sectional sizes,core sizes (or volumes), etc.).

In some implementations, the bottom redistribution layer 372, theconductive pillars 374, and/or the top redistribution layer 376 can beformed of a metal such as copper, aluminum, and/or so forth. In someimplementations, the bottom redistribution layer 372, the conductivepillars 374, and/or the top redistribution layer 376 can be formedusing, for example, an electroplating process.

As shown in FIG. 3A, the winding 371 is formed using three layers ofconductors—the bottom redistribution layer 372, the conductive pillars374, and the top redistribution layer 376. In some implementations, oneor more windings (e.g., winding 371) can be formed using more than threelayers of conductors. In some implementations, if the device 300includes multiple windings, two or more of the multiple windings caninclude the same or different layers of conductors (also can be referredto as conductor layers).

In some implementations, one or more of the semiconductor die 342, 344can be a module (e.g., a discrete device module, a packaged devicemodule). Accordingly, the module can be bonded to (e.g., coupled to) theredistribution layer 352).

FIG. 3B is a side cross-sectional view of a variation of the device 300shown in FIG. 3A, or a portion thereof, according to an implementation.Elements of the inductive component 370 that are out cross-sectionalplane are illustrated with dashed lines.

In this implementation, the inductive component 370 is modified fromthat shown in FIG. 3A. Rather than being formed using the conductivepillars 374 and top redistribution layer 376, the inductive component370 is formed using several wires 377. As shown in FIG. 3B, theredistribution layer 372 (which is referred to as the bottomredistribution layer when discussed in connection with theimplementation shown in FIG. 3A) defines, or includes, pads 372A, 372Bto which at least some of the wire 377 can be coupled (e.g., bonded,soldered). Accordingly, the wires 377 and the redistribution layer 372collectively define a winding 371 of an inductive component 370.

In some implementations, the wires 377 can be, for example, bond wires,coiled wires, copper clips, and/or so forth. In some implementations,one or more of the wires 377 can define one or more loops. In someimplementations, one or more of the wires 377 can have a different shapethan shown in FIG. 3B. In some implementations, one of the wires 377 canhave a different shape or cross-sectional than another of the wires 377shown in FIG. 3B.

In some implementations, more pads or less pads than shown in FIG. 3B,can be included in the redistribution layer 372. In someimplementations, the pads 372A, 372B can have the same or differentsurface area (e.g., footprint, outer profile) and/or volume. In someimplementations, one or more additional redistribution layers (notshown) can be stacked on (e.g., vertically stacked on) one or moreportions of the redistribution layer 372.

In some implementations, a different passive element (e.g., a resistiveelement) can be included in the device 300 instead of (or in conjunctionwith) the inductive component 370. In such implementations, thedifferent passive element can be formed using a variety of materialssuch as wires, copper clips, bonding materials, polysilicon, and/or soforth.

FIG. 4B is a top view of conductors within a winding 471B of aninductive component. The winding 471B is illustrated without a moldinglayer disposed around the winding 471B so that the conductors includedin the winding 471B can be readily illustrated. The winding 471B shownin FIG. 4B can be similar to the windings 371 shown in FIG. 3A or FIG.3B. As shown in FIG. 4B, the winding 471B includes conductors includedwithin a redistribution layer 472B (e.g., bottom redistribution layer)(shown with cross-hatched lines) and wires 477B (e.g., wire conductors)(shown with slanted lines).

A variety of configurations of windings can be formed within aninductive component different than that shown in FIG. 4B. For example, awinding can be formed using conductors within a redistribution layerhaving one or more right angles, one or more curved portions, and/or soforth. In some implementations, the wires 477B can have multiple spiralshapes and/or a helical shape along a vertical axis and/or lateral axis.

FIG. 3C is a side cross-sectional view of another variation of thedevice shown in FIG. 3A, or a portion thereof, according to animplementation. In this implementation, a first chip 378 (also can bereferred to as a first module) and a second chip 379 (also can bereferred to as a second module) are included on side C1 of the device300. The first chip 378 is coupled to (e.g., bonded to) redistributionlayer 373 and the second chip is coupled to (e.g., bonded to)redistribution layer 372. The redistribution layer 372 includes pad372C, pad 372D, and pad 372E. The redistribution layer 373 includes pad373A and pad 373B. The redistribution layer 373 is disposed onredistribution layer 372 such that the redistribution layer 372 isdisposed between the redistribution layer 373 and the substrate 330. Thepad 373A is disposed on (or coupled to) the pad 372C, and the pad 373Bis coupled to the pad 372D.

In this implementation, the first chip 378 has a thickness that is lessthan a thickness of the second chip 379. In some implementations, thethickness of the first chip 378 can be the same as the thickness of thesecond chip 379. In some implementations, a size of the first chip 378can be different than, or the same as, a size of the second ship 379. Insome implementations, the molding layer 360 (or at least a portionthereof) may optionally be omitted from the device 300 shown in FIG. 3C.

In some implementations, less than two chips can be coupled to one ormore redistribution layers (e.g., redistribution layer 372) on side C1.In some implementations, the first chip 378 and/or the second chip 379can be, or can include, a module. In some implementations, the firstchip 378 and or the second chip 379 can be, or can include, a discretedevice (e.g., a MOSFET device, an inductor, a passive component, and/orso forth).

FIG. 5A is a side cross-sectional view of yet another device 500, or aportion thereof, according to an implementation. As shown in FIG. 5A,the device 500 includes a capacitive component 580 having a capacitiveplate 582 disposed within a molding layer 560 on side E1 (e.g., a firstside) of a substrate 530. Interconnection components 550 andsemiconductor die 542, 544 are disposed within a molding layer 540 onside E2 (e.g., a second side) of the substrate 530 of the device 500. Insome implementations, the capacitive plate 582 can be a portion of(e.g., included in) a redistribution layer formed on side E1 of thesubstrate 530.

Several of the interconnection components 550 in FIG. 5A are defined byportions of a redistribution layer 552 (which can be referred to asredistribution layer portions) and conductive pillars 554. One or moreportions of the interconnection components 550 can be included within aninterconnection region (e.g., interconnection region 145 shown in FIG.1). A surface plating layer 556 can be disposed between the device 500and an external block 590.

As shown in FIG. 5A, the capacitive component 580 includes a capacitorCAP1 that is defined by the capacitive plate 582, a redistribution layerportion 552A, and the substrate 530 disposed between the capacitiveplate 582 and the redistribution layer portion 552A. The capacitiveplate 582 functions as a first capacitive plate of the capacitor CAP1,the redistribution layer portion 552A functions as a second capacitiveplate of the capacitor CAP1, and the substrate 530 functions as adielectric of the capacitor CAP1. Accordingly, the capacitor CAP1 usesthe substrate 530 as a dielectric and has at least a portion disposed onone side of the substrate 530 (e.g., side E1) and another portiondisposed on the opposite side of the substrate 530 (e.g., side E2).

In this implementation, the capacitive component 580 includes acapacitor CAP2 (i.e., a second capacitor) that is defined (similarly toCAP1) by the capacitive plate 582, a redistribution layer portion 552B,and the substrate 530 disposed between the capacitive plate 582 and theredistribution layer portion 552B. Accordingly, the capacitor CAP2 usesthe substrate 530 as a dielectric and has at least a portion disposed onone side of the substrate 530 (e.g., side E1) and another portiondisposed on the opposite side of the substrate 530 (e.g., side E2).

In this implementation, the capacitor CAP1 and the capacitor CAP2 sharethe capacitive plate 582. In other words, the capacitor CAP1 and thecapacitor CAP2 include a common capacitive plate—capacitive plate 582.Although not shown in FIG. 5A, in some implementations, the capacitorCAP1 and the capacitor CAP2 can include different capacitive plates onside E1 of the substrate 530.

FIG. 5B is a diagram that illustrates an equivalent circuit of thecapacitive component 580 and the semiconductor die 542, 544 shown inFIG. 5A. As shown in FIG. 5B, the capacitive component 580, whichincludes the capacitor CAP1 and the capacitor CAP2 in series, isdisposed between the semiconductor die 542 and the semiconductor die544. The diagram also illustrates a second set of capacitors CAP3 andCAP4 in parallel with the capacitors CAP1 and CAP2.

The capacitive component 580 can be used for signal isolation betweenthe semiconductor die 542 and semiconductor die 544. In other words, thecapacitive component 580 can be used to isolate signaling between thesemiconductor die 542, 544. In some implementations, the signaling caninclude signal pulses, analog signals (produced using decimationtechniques), relatively high frequency signals, relatively low frequencysignals, and/or so forth. In some implementations, integration of one ormore capacitive components used for signal isolation can be referred toas isolation integration.

In some implementations, the semiconductor die 542 and/or thesemiconductor die 544 can include a variety of semiconductor devicesand/or circuits. In some implementations, the semiconductor die 542 caninclude, for example, a driver circuit and the semiconductor die 544 caninclude, for example, a comparator circuit. The driver circuit can beconfigured to communicate using one-way communication with thecomparator circuit via the capacitive component 580. In someimplementations, two-way communication via one or more capacitivecomponents similar to capacitive component 580 can be included in avariation of the device 500. In other words, in some implementations,multiple capacitors in parallel and series can be included in the device500.

Referring back to FIG. 5A, in some implementations, the substrate 530can be, or can include, for example, aluminum nitride (AlN), siliconnitride (Si₃N₄), alumina (Al₂O₃) or a derivative thereof, FR4, and/or soforth. In some implementations, a vertical dimension D1 (along thevertical direction A1), which can be referred to as a thickness orheight, of the substrate 530 can be less than (e.g., thinner) than avertical dimension D2 of the molding layer 540 and/or a verticaldimension D3 of the molding layer 560. In some implementations, thevertical dimension D1 of the substrate 530 can be configured for atarget capacitance value of capacitor CAP1, capacitor CAP2, and/or acombined capacitance of capacitor CAP1 and capacitor CAP2. In someimplementations, the vertical dimension D1 of the substrate 530 can beapproximately equal to, or less than, the vertical dimension D2 and/orthe vertical dimension D3. In some implementations, the substrate 530can have a vertical dimension that can be thinned or increased for atarget capacitance value.

Although illustrated in this embodiment as including series capacitors,one or more capacitive components formed within the device 500 caninclude two or more capacitors in parallel and/or two or more capacitorsin series. Although not shown in FIG. 5A, the device 500 can includemagnetic integration on side E1 and/or side E2 of the substrate 530. Insuch implementations, the capacitive component 580 (or a variationthereof) can be electrically coupled to a magnetic component on side E1and/or on side E2 of the substrate 530 using, for example, aredistribution layer, one or more conductive pillars, and/or so forth.In some implementations, the device 500 can include interconnectionintegration on side E1 of the substrate 530. In some implementations,the device 500 can exclude interconnection integration from, forexample, side E2 of the substrate 530.

Although not shown in FIG. 5A, in some implementations, a capacitivecomponent included in device 500 can be configured with a capacitor(e.g., a single capacitor) coupled to the redistribution layer 552through a conductive via. In such implementations, capacitor CAP1 orcapacitor CAP2 can be eliminated. In such implementations, a conductivevia formed within (e.g., formed through) the substrate 530 can have afirst end coupled to (e.g., directly coupled to) the capacitive plate582 and can have a second end coupled to (e.g., directly coupled to) theredistribution layer 552.

Although not shown in FIG. 5A or FIG. 5B, in some implementations, thecapacitive component 580 (or a variation thereof) can be used for signalisolation between a semiconductor device (e.g., a circuit) included inthe device 500 and a semiconductor device external to the device 500,such as a circuit included in, or coupled to, the external block 590. Insuch implementations, an interconnection component disposed through theentirety of the molding layer 540 (e.g., interconnection component 350Bshown in FIGS. 3A through 3C) can be electrically coupled to thecapacitive component 580.

Although not shown in FIG. 5A, in some implementations, multiplecapacitive components can be formed so that at least some portions ofthe capacitive components are lateral to one another within the samehorizontal plane (e.g., plane A4). In some implementations, multiplecapacitive components can be formed vertically on top of one another sothat the capacitive components are vertically stacked along verticaldirection A1.

In some implementations, the capacitive plate 582, the conductivepillars 554, and/or the redistribution layer 552 can be formed of ametal such as copper, aluminum, and/or so forth. In someimplementations, the capacitive plate 582, the conductive pillars 554,and/or the redistribution layer 552 can be formed using, for example, anelectroplating process.

FIG. 5C is a side cross-sectional view of a variation of a portion ofthe device 500 shown in FIG. 5A. As shown in FIG. 5A, the device 500includes a capacitive component CAPM having at least a portion embeddedwithin the substrate. Although not labeled, the capacitive componentCAPM includes multiple (at least a pair of) capacitive plates (also canbe referred to as electrodes) and a dielectric (also can be referred toas a dielectric layer) disposed between the capacitive plates. Thecapacitive plates and dielectric of the capacitive component CAPM aredisposed within the substrate 530. In this implementation, thecapacitive component CAPM is electrically coupled to other componentswithin the device 500 using vias 599. The capacitive component CAPM iscoupled to redistribution layer portion 552A on side E1 of the substrate530 using one of the vias 599 and is coupled to electrode 582A (whichcan be part of a redistribution layer) on side E2 using another of thevias 599. The capacitive component CAPM can be used for, for example,signal integrity (decoupling) applications.

Although not shown, in some implementations, the capacitive componentCAPM can have at least a portion exposed. For example, at least aportion of the capacitive component CAPM (e.g., a capacitive plate, atleast a portion of the dielectric) can be outside of (or exposed outsideof) the substrate 530 (e.g., on side E1 or side E2 of the substrate).Although not shown, in some implementations, a capacitive component suchas the capacitive component CAPM can be coupled to a surface (e.g., atop surface, a bottom surface) of the substrate 530.

FIGS. 6A through 6G are side cross-sectional views that illustrateformation of the device 300 shown in FIG. 3A, according to animplementation. Many of the formation elements shown in FIGS. 6A through6G can be used to form portions of FIGS. 3B and 3C. Descriptions relatedto these variations are also described below.

In this implementation, the device 300 includes both magneticintegration and interconnection integration and, accordingly, processingfor many of the layers is performed on both sides of the substrate 330.In some implementations, the device 300 can also include isolationintegration. In some embodiments, magnetic integration and/orinterconnection integration can be excluded from the device 300. In someimplementations, one or more of the processing steps can be performed asa batch process (with other devices) or as a continuous process. In someimplementations, final testing can also be performed in batch processes(with other devices) to reduce test cost and decrease manufacturingcycle time. After final test, the device 300 can be singulated fromother devices (e.g., other connected or grouped devices) into theindividual devices shown in FIGS. 3A through 3C.

In some implementations, one or more processing steps can be performedsimultaneously, serially, or in an interleaved fashion. For example, insome implementations, processing (e.g., plating, deposition) can beperformed on side C1 of the substrate 330, following which processingcan be performed on side C2 of the substrate 330. In someimplementations, processing (e.g., etching) can simultaneously beperformed on both side C1 and side C2 of the substrate 330. More detailsrelated to processing order will be described in connection with theprocessing steps below.

FIG. 6A is a diagram that illustrates a substrate 330. As shown in FIG.6A, substrate vias (or openings) 331, 332 are formed (e.g., formed usingan etch or mechanical process (e.g., a drilling process)) within thesubstrate 330. In some implementations, the substrate can include any ofthe substrate materials described above. The substrate 330 can have ashape (e.g., a vertical dimension, an area) that facilitates assembly ofa multitude of individual devices (e.g., packages) similar to device300.

The substrate 330 shown in FIG. 6A can be seeded (on side C1 and on sideC2) with a metal, such as copper, as preparation for electroplating ofthe bottom redistribution layer 372 and the redistribution layer 352.Although not shown in FIG. 6A or 6B, after the seeding process has beenperformed a photosensitive material (e.g., a dry film), that canfunction as a photoresist layer for redistribution layer formation, isdisposed on each of the seed layers. In some implementations, thephotoresist layers for redistribution layer formation can each bereferred to as a redistribution photoresist layer.

Using a photolithography process, redistribution photoresist layers (oneach side of the substrate 330) can be patterned together orindividually such that areas to be electroplated are removed. Gaps oropenings in the redistribution photoresist layers are electroplated toform the bottom redistribution layer 372 and the redistribution layer352 shown in FIG. 6B. In some implementations, CMP is used topolish/remove the electroplated layer. FIG. 6B illustrates the device300 after the redistribution photoresist layers have been removed.

In some implementations, the entire surface of both sides of thesubstrate 330 can first be electroplated (using one or more processingsteps). Subsequently, portions of the electroplated areas can be removedusing one or more redistribution photoresist layers, photolithographyprocesses, and etching processes to form the bottom redistribution layer372 and the redistribution layer 352.

Although not shown in FIG. 6A through 6G, the redistribution layer 352and/or the redistribution layer 372 can be associated with a capacitivecomponent. In other words, the redistribution layer 352 and/or theredistribution layer 372 can be associated with isolation integration.In some implementations, a conductive via (such as conductive vias 331,332) can be formed as part of a capacitive component.

After the redistribution layers 352, 372 have been formed, a photoresistlayer for formation of conductive pillars can be formed on each side ofthe substrate 330. In some implementations, the photoresist layers forformation of conductive pillars can each be referred to as a pillarphotoresist layer. The pillar photoresist layers can be patterned usingphotolithography techniques (e.g., a photolithography process, anetching process). Specifically, using a photolithography process, pillarphotoresist layers (on each side of the substrate 330) can be patternedsuch that areas to be electroplated are removed. Gaps or openings in thepillar photoresist layers can then be electroplated to form theconductive pillars 654 and the conductive pillar 664 shown in FIG. 6C.FIG. 6C illustrates the device 300 after the pillar photoresist layershave been removed.

In some implementations, one or more of the redistribution photoresistlayers can remain on the device 300 when one or more of the pillarphotoresist layers are formed on the device 300. In someimplementations, one or more of the redistribution photoresist layerscan be polished (e.g., polished using a chemical mechanical polishing(CMP) process) and/or cleaned before one or more of the pillarphotoresist layers are formed.

After the conductive pillars 354, 364 have been formed, thesemiconductor die 342, 344 and/or other components (e.g., other passivecomponents) (not shown) are coupled to (e.g., placed on, fused to) oneor more conductors (e.g., pads) formed within the redistribution layer352 as shown in FIG. 6D. Although not shown in FIG. 6D, in someimplementations, one or more semiconductor die and/or other componentscan be coupled to a portion the bottom redistribution layer 372.

In some implementations, one or more processes can be used to couple thesemiconductor die 342, 344 (and/or other components) to theredistribution layer 352. For example, the coupling (e.g., via acoupling layer) can be performed using a conductive epoxy, soldering,metal-to-metal bonding (e.g., copper-to-copper bonding), bonding usingnano-particle silver or other materials, and/or so forth. In someimplementations, the semiconductor die 342, 344 (and/or othercomponents) can be mechanically modified (e.g., polished using a CMPprocess, modified using a grinding process) a vertical dimensionapproximately equal to the vertical dimension C7 of the conductivepillars 354 so that the semiconductor die 342, 344 (and/or othercomponents) can be at least partially disposed within or encapsulatedwithin the molding layer 340 (not shown in FIG. 6D).

In some implementations, the vertical dimension of one or more of thesemiconductor die 342, 344 (and/or other components) can be less than(e.g., thinner) than the vertical dimension C7 of the conductive pillars354. In some implementations, the vertical dimension of thesemiconductor die 342, 344 (and/or other components) can be greater than(e.g., thicker than) the vertical dimension C7 of the conductive pillars354. In such implementations, one or more of the semiconductor die 342,344 (and/or other components) can be mechanically modified after beingcoupled to the redistribution layer 352.

After the semiconductor die 342, 344 (and/or other components) arecoupled to the redistribution layer 352, molding layers can be formedwithin the device 300 as shown in FIG. 6E. Specifically, a sub-layer 362of the molding layer 360 can be formed on side C1 of the device 300 andmolding layer 340 can be formed on side C2 of the device 300. In someimplementations, sub-layer 362 of the molding layer 360 can include theportion 361, which includes a magnetic substance.

There are also a number of options that can be utilized for forming themolding layer 340 and/or the molding layers 360 (or portions thereof)such as transfer molding, pressure molding layer, and so forth. In someimplementations, a vertical dimension of the molding layer 340 on sideC2 can be targeted to be slightly greater than a height of theinterconnection components 350 (including the conductive pillars 354)and a height of the semiconductor die 342 (including the verticaldimension of the redistribution layer portion 352D). Similarly, avertical dimension of the sub-layer 362 of the molding layer 360 on sideC1 can be targeted to be slightly greater than a height of theconductive pillars 354 (including the vertical dimension of the bottomredistribution layer 372).

After the molding layer 340 and the sub-layer 362 of the molding layer360 have been initially formed, a mechanical modification process (e.g.,grinding process, a polishing process) can be used to remove at least aportion of the molding layer 340 and/or the sub-layer 362 of moldinglayer 360 to expose ends of the conductive pillars 354 and to exposeends of the conductive pillars 374. The mechanical modification processcan also be used to expose a portion of the semiconductor die 342. Insome implementations, the portion of the semiconductor die 342 that isexposed can be a drain portion, a source portion, and/or a gate portionof a semiconductor device included in the semiconductor die 342.

In some implementations, the mechanical modification process can includethinning of side C1 and/or side C2. The thinning of side C1 can includeremoving, for example, portions of the semiconductor die 342 (and/or thesemiconductor die 344), the conductive pillars 354, the molding layer340, and/or so forth. The thinning of side C2 can include removing, forexample, portions of the conductive pillars 374, the molding layer 360,and/or so forth. Accordingly, the overall vertical dimension (orthickness) of the device 300 can be reduced beyond that shown in, forexample, FIG. 6E.

As shown in FIG. 6F, in a variation of the process flow, an additionalredistribution layer 358 (or portion thereof) (also can be referred toas a second redistribution layer) can be formed (e.g., disposed) betweenthe redistribution layer 352 (also can be referred to as a firstredistribution layer) and, for example, the semiconductor die 342. Insuch implementations, a mechanical modification process can result inthinning the semiconductor die 342. Specifically, the mechanicalmodification process can be used to remove a portion 342X of thesemiconductor die 342 (which is shown as a dashed line) and thin thesemiconductor die 342 beyond that shown in FIG. 6E because of theadditional redistribution layer 358 disposed between the redistributionlayer 352 and the semiconductor die 342.

Following the mechanical modification process on side C2, the surfaceplating layer 356 can be formed as shown in FIG. 6G. The surface platinglayer 356 can include conductors (e.g., metal connections) to theexposed semiconductor die 342 and the interconnection components 350. Insome implementations, the surface plating layer 356 can have a surfacearea that extends to one or more edges of the device 300, provides arelatively large surface area for a connection, can have conductors thatcan provide electrical connection or traces to, for example, locationswithin the external block 390, and/or so forth. For example, in someimplementations, a portion of the surface plating layer 356 can have asurface area that is greater than a surface area of an exposed portionof the semiconductor die 342. The portion of the surface plating layer356 can have a relatively large surface area that can be used as aconvenient electrical connection for a portion of the external block390. In some implementations, a portion of the surface plating layer 356can have a surface area that is equal to or less than a surface area ofexposed portion of the semiconductor die 342. An example of a surfaceplating layer that has a surface area less than a surface area of anexposed portion of a semiconductor die is discussed in connection withat least FIGS. 11A and 11B.

In some implementations, the surface plating layer 356 can be formedusing a variety of plating processes. For example, in someimplementations, a titanium-silver seed can be deposited and patternedusing a photolithography processes. These processes can be followed by asolder plating process as a final finish layer.

In this implementation, the top redistribution layer 376 can be formedbefore or after the surface plating layer 356 is formed. In someimplementations, at least some portions of the top redistribution layer376 can be formed simultaneous to the surface plating layer 356. Uponformation of the top redistribution layer 376, the winding 371 isformed.

Also, as shown in FIG. 6G, the top redistribution layer 376 isencapsulated within sub-layer 363 of the molding layer 360. In someimplementations, the sub-layer 363 can exclude a magnetic substance, orcan be made of the same material as the sub-layer 362 (which includesmagnetic substance). The sub-layer 363 of the molding layer 360 can beformed using one or more molding processes, and/or can be formed beforeor after the surface plating layer 356 is formed. In someimplementations, the sub-layer 363 can be, or can include, for example,a passivation layer.

In some implementations, process flow shown in FIGS. 6A through 6G canbe modified for several variations. For example, to form theimplementations shown in, for example, FIGS. 3B and 3C, formation of theconductive pillars 374 can be omitted. Instead, passive devices,conductive coils (e.g., conductive coils formed using a wire (e.g., wire377 shown in FIG. 3B)), and/or so forth can be coupled to the bottomredistribution layer 372 (which can be used to form pads) and themolding layer 340 can be formed over the passive devices, conductivecoils, and/or so forth. In some implementations, the pattern of thebottom redistribution layer 372 on the substrate 330 can be differentthan that shown in, for example, FIG. 6B to accommodate passive devices,conductive coils, and/or so forth.

If the device 300 is produced without magnetic integration on side C1,the substrate 330 can be partially (e.g., thinned) or completely removedusing a mechanical process (e.g., a grinding process, polishingprocess). In such embodiments, the molding layer 340 can function as theprimary structural component of the device 300. A passivation layer(e.g., a lamination layer) can be used to seal the device 300 after thesubstrate 330 has been removed. An example of this type of structure isshown in FIG. 7, which is a variation of the device 300 shown in FIGS.3A through 3C. In such implementations, the use of a relatively low-costsubstrate 330 as an intermediate carrier can be used during production.

After removal of the substrate 330, a cover 396 (e.g., a laminationlayer, a cap, a passivation layer) as shown in FIG. 7 is disposed on(e.g., coupled to) at least a top surface of the device 300 toencapsulate or cover at least some portions of the device 300 (e.g.,exposed conductors included in the redistribution layer 352). In someimplementations, at least a portion of the substrate 330 can bemaintained on the top surface of the device 300 as a cover. In someimplementations, a cover similar to the cover 396 can be disposed on orcoupled to other surfaces (e.g., side surfaces) of the device 300.

In some implementations and as discussed above, a stand-along magneticcomponent/device and/or a stand-along capacitive component/device can beformed using the techniques described above. In such implementations,for example, an inductive component can be formed on a substrate with orwithout interconnection integration and/or without (e.g., excluding) asemiconductor die included in the device. As another example, in suchimplementations, a capacitive component can be formed around a substratewith or without interconnection integration and/or without (e.g.,excluding) a semiconductor die included in the device.

As mentioned above in connection with FIGS. 6A through 6G, in someimplementations, one or more processing steps (e.g., seed layer steps,electroplating steps, photoresist steps, etching steps, etc.) can beperformed simultaneously, serially, or in an interleaved fashion. Forexample, in some implementations, the redistribution layer on one side(e.g., bottom redistribution layer 372 on side C1) can be formed beforethe redistribution layer on the other side (e.g., redistribution layer352 on side C2) is formed.

In some implementations, one or more portions of the bottomredistribution layer 372 on side C1 can be formed in an interleavedfashion with the redistribution layer 352 on side C2. In other words,processing steps associated with side C1 can be performed betweenprocessing steps associated with side C2 (or vice versa). For example, aseed layer for the bottom redistribution layer 372 can be formed beforea seed layer for the redistribution layer 352 is formed. Afterelectroplating has been formed for both bottom redistribution layer 372and redistribution layer 352, a pattern defining the bottomredistribution layer 372 can be etched, after which a pattern definingthe redistribution layer 352 can be etched.

In some implementations, the structures on side C2 of the substrate 330can be formed before at least some of the structures are formed on sideC1 of the substrate 330, or vice versa. In such implementations, thestructures can be formed on one side of the substrate 330, and thesubstrate 330 (and structures) can be flipped to form additionalstructures on the other side of the substrate 330. In such embodiments,the substrate 330 can be at least partially removed (e.g., thinned)after the structures are formed on side C2, but before the structuresare formed on side C1 of the substrate, or vice versa.

FIGS. 8A through 8H are diagrams that illustrate a perspective view offormation of a device 800. Although, these diagrams illustrate formationof interconnection integration, many of the processing steps illustratedin FIGS. 8A through 8H can be used in conjunction with magneticintegration and/or isolation integration.

FIG. 8A is a diagram that illustrates a substrate 830 that has a squareshape or profile. In some implementations, the substrate 830 can have arectangular shape or can have a different shape (or profile).

As shown in FIG. 8B a redistribution layer 852 is formed using anelectroplating process that can include, for example, seeding,photolithography, etching, and/or so forth. Portions of theredistribution layer 852 can have a variety of shapes. For example, theredistribution layer 852 can include pads 857 and/or connectors 858 thatcan be coupled to one or more semiconductor die 841, 842, and/or 843(such as shown in FIGS. 8C and 8E, for example).

As shown in FIG. 8C, conductive pillars 854 are formed on theredistribution layer 852. The conductive pillars 854 include portions854A through 854C, which can each be referred to as conductive pillarportions 854A through 854C. As shown in FIG. 8C, the conductive pillars854 can have a variety of lateral dimensions and lengths. In someimplementations, one or more of the conductive pillars 854 can functionas an input pin and/or as an output pin of one or more semiconductordevices included in one or more of the semiconductor die 841, 842, 843(such as shown in FIG. 8E). As shown in FIG. 8C, the conductive pillars854 and the portions of the redistribution layer 852 have a variety ofshapes, aspect ratios, and cross-sectional profiles.

As shown in FIG. 8D, portions of a bonding agent 862 (e.g., conductiveepoxy, solder) are disposed on at least some portions of theredistribution layer 852 so that one or more of the semiconductor die841 through 843 can be coupled to the redistribution layer 852 as shownin FIG. 8E. In some implementations, materials in addition to or insteadof the bonding agent 862 can be used to couple the semiconductor die tothe redistribution layer 852. In some implementations, a reflow processcan be performed after the semiconductor die 841 through 843 have beencoupled to the redistribution layer 852.

In some implementations, each of the semiconductor die 841 through 843can include a variety of semiconductor devices. For example, in someimplementations, the semiconductor die 841 can be, or can include, alow-side MOSFET device, and the semiconductor die 841 can be, or caninclude, a high-side MOSFET device. The semiconductor die 843 can be, orcan include, an integrated circuit including a driver device.

Cross-sectional views cut along line G1 and line G2 are shown in FIG. 9Aand FIG. 9B, respectively. Some of the relative dimensions of the device800 are illustrated in FIGS. 9A and 9B. A top surface of the moldinglayer 840 (not shown in FIGS. 9A and 9B but shown in FIGS. 8F through8H) is illustrated as a dashed line I1.

As shown in FIG. 9A, a combined vertical dimension (or height) of thesemiconductor die 841 and the bonding agent 862 is approximately equalto a vertical dimension H1 of the conductive pillar portion 854C. Thesemiconductor die 841 has a vertical dimension H2 and the bonding agent862 has a vertical dimension H3. Similarly, a combined verticaldimension of the semiconductor die 842 (which has a vertical dimensionH4) and the bonding agent 862 is approximately equal to the verticaldimension H1 of the conductive pillar portion 854C of the conductivepillars 854. In this implementation, the conductive pillar portion 854C,and the semiconductor die 841, 842 are disposed on the redistributionlayer 852. Accordingly, a stack including the conductive pillar portion854C and the redistribution layer 857 has a vertical dimension (orheight) approximately equal to a vertical dimension of a stack includingthe semiconductor die 841 (or the semiconductor die 842), the bondingagent 862, and the redistribution layer 852.

In contrast, as shown in FIG. 9B, a stack (e.g., a vertical stack)disposed on the redistribution layer 852 and associated with thesemiconductor die 843 has a vertical dimension H5 that is less than thevertical dimension H9 of, for example, one of the conductive pillarportions 854A of the conductive pillars 854 (and/or the conductivepillar portion 854C). The stack associated with the semiconductor die843 (along line 12) includes the bonding agent 862, a portion of aconductive pillar 854, and the semiconductor die 843. The portion of theconductive pillar 854 is disposed between the bonding agent 862 and thesemiconductor die 843. Also, in some implementations, the stack caninclude at least a portion of the redistribution layer 852 so that thebonding agent 862 and the portion of the conductive pillar 854 aredisposed between the semiconductor die 843 and the portion of theredistribution layer 852.

As shown in FIG. 9B, the semiconductor die 843 has a top surface lowerthan a top surface of, for example, the semiconductor die 841, whichcorresponds approximately with the top surface of the molding layer 840(not shown in FIG. 9B but shown in FIGS. 8F through 8H) illustrated bythe dashed line I1. The top surface of the semiconductor die 843 has adistance H6 from the dashed line I1. In some implementations, thedistance H6 can be less than a vertical dimension H7 of thesemiconductor die 843. In some implementations, the vertical dimensionH6 can be approximately equal to or greater than the vertical dimensionH7 of the semiconductor die 843.

In some implementations, the vertical dimension H1 of the conductivepillar can be between approximately a few micrometers and thousands ofmicrometers (e.g., 10 microns (μm), 50 μm, 125 μm, 1000 μm, 2000 μm). Asshown in FIG. 9A, the vertical dimension H3 of the bonding agent 862 isless than the vertical dimension H2 of the semiconductor die 841 and/orthe vertical dimension H4 of the semiconductor die 842. In someimplementations, the vertical dimension H3 of the bonding agent 862 canbe approximately between a few micrometers and hundreds of micrometers(e.g., 10 μm, 25 μm, 100 μm, 200 μm). Similarly, in someimplementations, the redistribution layer 852 can have a verticaldimension H8 of approximately between a few micrometers and hundreds ofmicrometers (e.g., 10 μm, 25 μm, 40 μm, 100 μm, 200 μm).

In some implementations, the vertical dimension of one or more of thesemiconductor die 841, 842, 843 can be approximately between a fewmicrometers and thousands of micrometers (e.g., 10 μm, 50 μm, 125 μm,1000 μm, 2000 μm). In some implementations, the substrate 830 can have avertical dimension H10 of approximately between a few micrometers andthousands of micrometers (e.g., 10 μm, 50 μm, 125 μm, 600 μm, 1000 μm,2000 μm).

As shown in FIG. 9A, a distance H11 between the conductive pillarportion 854C and the semiconductor die 842 is approximately equal to alateral dimension H12 of the conductive pillar portion 854C. In someimplementations, the distance H11 between the conductive pillar portion854C and the semiconductor die 842 can be less than or greater than thelateral dimension H12 of the conductive pillar portion 854C. Similarly,as shown in FIG. 9B, a distance H13 between the conductive pillarportion 854A and the semiconductor die 841 is approximately equal to alateral dimension H14 of the conductive pillar portion 854A. In someimplementations, the distance H13 between the conductive pillar portion854A and the semiconductor die 841 can be different than (e.g., lessthan or greater than) the lateral dimension H14 of the conductive pillarportion 854A. In some implementations, the lateral dimension H12 of theconductive pillar portion 854C and/or the lateral dimension H14 of theconductive pillar portion 854A can be approximately between a fewmicrometers and thousands of micrometers (e.g., 10 μm, 50 μm, 125 μm,1000 μm, 2000 μm).

As shown in FIG. 9A, a distance H15 between portions of theredistribution layer 852 (and features disposed thereon) can be lessthan the lateral dimension H12 of the conductive pillar portion 854C.Similarly, as shown in FIG. 9B, a distance H16 between semiconductor die843 and semiconductor die 841 can be less than the lateral dimension H14of the conductive pillar portion 854A. In some implementations, thedistance H15 and/or the distance H16 can be approximately between tensof micrometers and thousands of micrometers (e.g., 10 μm, 50 μm, 125 μm,1000 μm, 2000 μm). The semiconductor die 841, 842, and/or 843 can be assmaller than or equal to 1 mm².

Referring now to FIG. 8F, after the semiconductor die 841 through 843have been coupled to the redistribution layer 852 via the bonding agent862, a molding layer is disposed on the device 800 to encapsulateportions of the device 800. The molding layer 840, and other componentsincluded in the device 800, can be mechanically modified (e.g.,polished, modified using the grinding process) so that at least some ofthe components are exposed through the molding layer 840. In thisimplementation, at least a portion (e.g., a surface) of thesemiconductor die 841 and at least a portion (e.g., a surface) of thesemiconductor die 842 are exposed through the molding layer 840. Also,at least some portions (e.g., surfaces) of the conductive pillars 854(labeled as conductive pillar portions 854A, 854B, and 854C) can beexposed through the molding layer 840.

A surface plating layer 870, which includes portions 870A through 870D,is formed as shown in FIG. 8G over the exposed portions of conductivepillar portions 854A through 854C of the conductive pillars 854 and theexposed portions of the semiconductor die 841, 842. In thisimplementation, the portions of the surface plating layer 870 havesurface areas that are generally greater than the corresponding surfaceareas of the conductive pillars 854 to which the portions of the surfaceplating layer 870 are coupled.

For example, portions 870D of the surface plating layer 870 are disposedover and coupled to exposed portions of conductive pillar portions 854A.In this implementation, each of the portions 870D has a surface areathat is greater than a surface area of each of the conductive pillarportions 854A. Also, in this implementation, a surface area of a portion870A of the surface plating layer 870 is greater than a surface area ofan exposed portion of the semiconductor die 841 to which the portion870A is coupled. Further, in this implementation, a surface area of aportion 870B of the surface plating layer 870, which is disposed overthe conductive pillar portion 854B, is greater than a surface area ofthe conductive pillar portion 854B.

The portion 870C is disposed over both the semiconductor die 842 and theexposed portion of conductive pillar portion 854C. In thisimplementation, the portion 870C has a surface area greater than acombined surface area of the exposed portion of the semiconductor die842 and the conductive pillar portion 854C of the conductive pillars854. Accordingly, in this implementation, the portion 870C has a surfacearea greater than a surface area of the exposed portion of thesemiconductor die 842 and greater than a surface area of the exposedportion of the conductive pillar portion 854C of the conductive pillars854.

Although not shown in FIG. 8G, in some implementations, a surface areaof a portion of the surface plating layer 870 can be approximately equalto or smaller than the exposed portions of one or more of thesemiconductor die 841, 842 and/or one or more of the exposed portions ofthe conductive pillar portions 854A through 854C of the conductivepillars 854 disposed below (and coupled to) the portion of the surfaceplating layer 870.

FIG. 8H illustrates the device 800 coupled to an external block 890 viathe surface plating layer 870 (not shown in FIG. 8H). As shown in FIG.8H, the molding layer 840 is disposed between the substrate 830 and theexternal block 890.

Because the device 800 is produced without magnetic integration, thesubstrate 830 can be partially or completely removed by a chemicalprocess and/or a mechanical process (e.g., a grinding process, apolishing process, an etch process) in some implementations (beforebeing coupled to the external block 890). In such embodiments, themolding layer 840 can function as the primary structural component ofthe device 800.

FIG. 10 is a flowchart that illustrates a method for forming one or moreof the devices described herein. For example, the flowchart canillustrate a method for forming one or more the devices 300 shown inFIGS. 3A through 3C.

A first redistribution layer is formed on a first side of a substratewhere the first redistribution layer can include a first redistributionlayer portion and a second redistribution layer portion (block 1010).The first redistribution layer can be, for example, redistribution layer252 shown in FIGS. 2A through 2C, redistribution layer 352 shown in FIG.3, redistribution layer 552 shown in FIG. 5A, and so forth.

A conductive pillar is formed on the first redistribution layer portionusing an electroplating process (block 1020). The conductive pillar canbe, for example, one of the conductive pillars 254 shown in FIG. 2Athrough 2C, one of the conductive pillars 354 shown in FIGS. 3A through3C, one of the conductive pillars 554 shown in FIG. 5A, and so forth.

A semiconductor die including a semiconductor device is coupled to thesecond redistribution layer portion (block 1030). The semiconductor diecan be, for example, semiconductor die 244 shown in FIG. 2A through 2C,semiconductor die 344 shown in FIG. 3, and so forth. In someimplementations, the semiconductor die can be coupled to the secondredistribution layer portion using, for example, a conductive epoxy, asoldering element, and so forth.

A second redistribution layer is formed on a second side of thesubstrate where the second redistribution layer includes at least one ofa capacitive plate of a capacitive component or a portion of aninductive component (block 1040). In some implementations, thecapacitive component can be, for example, the capacitive component 580shown in FIG. 5A. In some implementations, the inductive component canbe, for example, the inductive component 370 shown in FIG. 3.

A first molding layer encapsulating at least a portion of thesemiconductor die on the first side of the substrate and encapsulatingat a least a portion of the first redistribution layer is formed (block1050). The first molding layer can be, for example, molding layer 240shown in FIGS. 2A through 2C, molding layer 340 shown in FIG. 3, moldinglayer 540 shown in FIG. 5A, and so forth.

A second molding layer disposed on the second side of the substrate isformed (block 1060). The second molding layer can be, for example,molding layer 260 shown in FIGS. 2A through 2C, molding layer 360 shownin FIGS. 3A through 3C, molding layer 560 shown in FIG. 5A, and soforth.

Although the method above describes formation of at least one of acapacitive component or an inductive component, in some implementations,formation of at least one of the capacitive component or the inductivecomponent can be optional. In such implementations, the second moldinglayer can optionally be formed. In some implementations, at least aportion of the substrate can be removed before forming any portion ofthe capacitive component or the inductive component. In implementationswhere the capacitive component and the inductive component are notformed, at least a portion of the substrate can be removed.

A possible process flow for producing at least a portion of the devices(e.g., device 100, device 200, device 300, device 500, device 800, andso forth) described herein can be summarized as follows: (1) deposit aseed layer, (2) form a first layer of resist material (e.g., a dry-filmmaterial), (3) pattern the first resist material, (4) plate aredistribution layer, (5) form of a second layer of resist material, (6)pattern the second resist material, (7) plate a conductive pillar, (8)remove the first and second resist material layers, (9) perform asacrificial etch to remove the seed layer, (10) place one or moresemiconductor die, (11) perform a reflow process, (12) fill with epoxyand cure, (13) perform a mechanical modification process (e.g., facegrinding) and/or a chemical cleaning process (e.g., a cleaning processto remove silicon oxide), (14) perform a plating process and (15) form asolder finish. In some implementations, more than one redistributionlayers can be formed in the device.

Another possible process flow for producing at least a portion of thedevices (e.g., device 100, device 200, device 300, device 500, device800, and so forth) described herein can be summarized as follows: (1)drill a hole for a via through a substrate, (2) deposit a first seedlayer for a first redistribution layer and in the hole, (3) form (e.g.,attach) a first layer of resist material, (4) form (e.g., plate) thefirst redistribution layer, (5) form a second layer (e.g., a pillarlayer) of resist material, (6) pattern the second layer of the resistmaterial, (7) form (e.g., plate) a conductive pillar layer, (8) removethe first layer and the second layer of resist material, (9) perform asacrificial etch to remove the first seed layer, (10) deposit a magneticmaterial, (11) deposit a second seed layer, (12) form (e.g., attach) athird layer of resist material, (13) form (e.g., plate) a secondredistribution layer, (14) form a final coat, and (15) perform marking(e.g., a scribe marking, a laser marking).

FIG. 11A is a diagram that illustrates a cross-sectional view of adevice 1100 coupled to an external block 1190. FIG. 11A is cut alongline J15 of a bottom view of the device 1100 shown in FIG. 11B. Thebottom view of the device 1100 shown in FIG. 11B is along the plane J1.

As shown in FIG. 11A, a substrate 1130 is coupled to a molding layer1140. Semiconductor die 1142 and a semiconductor die 1145 are disposedwithin the molding layer 1140. Only a portion of interconnectionintegration (e.g., contacts 1131 to the semiconductor die 1142, 1145) isillustrated within this embodiment for simplicity. Magnetic integrationand/or isolation integration could be included in variations of thisdevice 1100.

As shown in FIG. 11A, a surface plating layer portion 1144 is disposedbetween the semiconductor die 1142 and the external block 1190.Similarly, a surface plating layer portion 1146 is disposed between thesemiconductor die 1145 and the external block 1190. The surface platinglayer portion 1144 and the surface plating layer portion 1146 can beformed using the same surface plating layer formation process.

Also, as shown in FIG. 11A, an insulator 1143 is disposed between thesurface plating layer portion 1144 and the surface plating layer portion1146. Specifically, the insulator 1143 is disposed between the surfaceplating layer portions 1144, 1146 along plane J1, which is aligned alonga surface of the molding layer 1140. Accordingly, the insulator 1143 andthe surface plating layer portions 1144, 1146 are aligned along theplane J1. In addition, a bottom surface of each of the semiconductor die1142, 1145 is aligned along the plane J1.

The insulator 1143 has a lateral dimension J3 (e.g., length, width)along direction A2 that is greater than a distance J2 (also can bereferred to as a spacing or a gap) between the semiconductor die 1142and the semiconductor die 1145. Specifically, the distance J2 can bebetween (e.g., can be a minimum distance between) a sidewall of thesemiconductor die 1142 and a sidewall of the semiconductor die 1145. Inother words, the distance J2 between the semiconductor die 1142, 1145 isless than the lateral dimension J3 of the insulator 1143. The distanceJ2 can correspond with a lateral dimension of a portion of the moldinglayer 1140 disposed between the semiconductor die 1142, 1145. Thelateral dimension J3 corresponds with approximately a distance betweenthe surface plating layer portion 1144 and the surface plating layerportion 1146. In some implementations, the sidewall of the semiconductordie 1142 and the sidewall of the semiconductor die 1145 can be parallelor non-parallel.

The configuration shown in FIG. 11A can be particularly important inhigh voltage applications where the dimension J3 can have a minimum sizedefined to prevent, for example, breakdown between components includedin the device 1100. This configuration, which includes the layer 1143,can be used to decrease an overall size of the device 1100 whilemaintaining minimum distances between components (e.g., semiconductordie 1142 and 1145). In such embodiments, the plating layer 1144 does notcover an entire bottom surface of, for example, semiconductor die 1142.

As shown in FIG. 11A, a lateral dimension J4 of the surface platinglayer portion 1146 is smaller than a lateral dimension J5 of thesemiconductor die 1145. Similarly, a lateral dimension J6 of the surfaceplating layer portion 1144 is smaller than a lateral dimension J7 of thesemiconductor die 1142.

In some implementations, a minimum distance between surface platinglayer portions can be defined so that shorting, undesirablecontamination, and/or other issues can be avoided. For example, a firstsurface plating layer portion can be inadvertently electrically shortedto a second surface plating layer portion via contamination,misalignment, and/or so forth if the first surface plating layer portionis too close to the second surface plating layer portion.

In this implementation, the insulator 1143 is formed between the surfaceplating layer portion 1144 and the surface plating layer portion 1146 sothat a minimum desired distance (e.g., distance requirement) between thesurface plating layer portions 1144, 1146 can be satisfied. This minimumdistance can be satisfied while the distance J2 between thesemiconductor die 1142 and the semiconductor die 1145 is less than theminimum distance. Accordingly, the semiconductor die 1142 andsemiconductor die 1145 can be closer to one another than a minimumdistance for spacing between surface plating layer portions of a surfaceplating layer.

As shown in FIG. 11A, at least a portion of the surface plating layerportion 1144 is disposed between a first portion of the semiconductordie 1142 and the external block 1190, and at least a portion of theinsulator 1143 is disposed between a second portion of the semiconductordie 1142 and the external block 1190. Accordingly, at least a portion ofthe surface plating layer is coupled to a first surface (along the planeJ1) of the semiconductor die 1142, and at least a portion of theinsulator 1143 is coupled to a second surface (along the plane J1) ofthe semiconductor die 1142.

As shown in FIG. 11B, the surface plating layer portion 1144 has asurface area less than a surface area of the semiconductor die 1142.Similarly, the surface plating layer portion 1146 has a surface arealess than a surface area of the semiconductor die 1145. In other words,at least a portion of a perimeter of the surface plating layer portion1144 is disposed within, or coincides with, at least a portion of aperimeter of the surface area of the semiconductor die 1142.

In some implementations, a surface plating layer portion can have alateral dimension (e.g., width, length) that is greater than a lateraldimension of a semiconductor die on which the surface plating layerportion is coupled. For example, the surface plating layer portion 1144can have a lateral dimension J10 that is greater than a corresponding(or parallel) lateral dimension of the semiconductor die 1142 eventhough the lateral dimension J6 of the surface plating layer portion1144 is less than the corresponding (or parallel) lateral dimension J7of the semiconductor die 1142. Thus, at least a portion of a perimeterof the surface plating layer portion 1144 can intersect at least aportion of a perimeter of the surface area of the semiconductor die1142. Said differently, at least a first portion of a perimeter of thesurface plating layer portion 1144 can be disposed outside of at least aperimeter of the surface area of the semiconductor die 1142, and atleast a second portion of a perimeter of the surface plating layerportion 1144 can be disposed within the perimeter of the surface area ofthe semiconductor die 1142.

Although not shown in FIG. 11A or 11B, in some implementations, theinsulator 1143 may be coupled to a bottom surface of only one of thesemiconductor die 1142, 1145. In such implementations, a bottom surfacecan be entirely, or at least partially, covered by a surface platinglayer portion.

The insulator 1143 (which can be referred to or included in aninsulating layer) can be formed based on a variation of thesemiconductor processing described above. In some implementations, aninsulating layer (not shown) can be formed on (e.g., disposed on) theplane J1 before a surface plating layer is formed (e.g., formation ofsurface plating layer 870 shown in FIG. 8G, formation of surface platinglayer 356 shown in FIG. 6G).

In some implementations, the insulating layer can be disposed on thedevice 1100 before removal of portions of the molding layer 1140 hasbeen performed to expose the bottom surfaces of the semiconductor die1142, 1145. In alternative implementations, the insulating layer can beformed on the molding layer 1140 and each of the bottom surfaces of thesemiconductor die 1142, 1145 after the bottom surfaces of thesemiconductor die 1142, 1145 have been exposed.

After the insulating layer has been disposed on the device 1100, theinsulating layer can be patterned through chemical processing (e.g.,etching) and/or mechanical processing (e.g., grinding, polishing) toform the insulating layer 1143. After the insulator 1143 has beenformed, the surface plating layer portions 1144, 1146 can be formed. Asurface defined by the insulator 1143 and the surface plating layerportions 1144, 1146 can be chemically and/or mechanically processeduntil the surface is planar (e.g., substantially planar).

FIG. 12 is a diagram that illustrates a side cross-sectional view of avariation of the device 100. In some implementations, the device 100 canbe referred to as a packaged device or can be referred to as a package.As shown in FIG. 12, the device 100 is coupled to conductors 183, 184included in a lead frame (also can be referred to as a lead framestructure).

In some implementations, the device 100 can be coupled to, for example,an external block (e.g., a printed circuit board) via the lead frame. Insome implementations, the conductors 183, 184 of the lead frame can be,or can be considered a part of, an external block (such as externalblock 190 shown in FIG. 1). In some implementations, the conductors 183,184 of the lead frame can be considered a part of the device 100. Insome implementations, one or more of the conductors 183, 184 can be madeof a conductive material such as a metal or metal alloy.

In some implementations, one or more of the conductors 183, 184 can becoupled to one or more portions of the device 100 via a surface platinglayer. In some implementations, one or more of the conductors 183, 184can be coupled to one or more portions of the device 100 via a surfaceplating layer such as those described above.

For example, as shown in FIG. 12, conductor 183 can be coupled to (e.g.,electrically coupled to) one or more interconnection components includedin the interconnection region 145. The interconnection component can beused to electrically couple the conductor 183 to one or more components(e.g., a component included in the passive component region 125, acomponent included in the passive component region 135. As anotherexample, as shown in FIG. 12, conductor 183 can be coupled to (e.g.,electrically coupled to) the semiconductor die 144.

As shown in FIG. 12, each of the conductors 183, 184 has a relativelyflat cross-sectional profile or shape. In some implementations, one ormore of the conductors 183, 184 can have a different shape or profile.For example, one or more of the conductors 183, 184 can have a curvedportion, a recessed portion, a protrusion, a bent portion, orthogonallyoriented portions, a tapered portion, a notched portion, and/or soforth. In some implementations, a lead frame can include more conductorsthan shown in FIG. 12, or less conductors than shown in FIG. 12. Theconductors can have a thickness, length, and/or width different than theconductors 183, 184 shown in FIG. 12.

Any of the implementations described above (which can be variations ofFIG. 1) can similarly be coupled to a lead frame including conductorssuch as those shown in FIG. 12. For example, an inductive component(which can be stand-alone or can include interconnection integration) asdisclosed herein can be coupled to a lead frame as described herein. Asanother example, a capacitive component (which can be stand-alone or caninclude interconnection integration) as disclosed herein can be coupledto a lead frame as described herein.

FIG. 13A is a diagram that illustrates a perspective view of a device1300, or a portion thereof, according to an implementation. As shown inFIG. 13A, the device 1300 includes a plurality of interconnectioncomponents coupled to a substrate 1330. In this implementation, severalof the interconnection components are defined by portions of aredistribution layer 1352 (which can be referred to as redistributionlayer portions, or as contacts of the redistribution layer) andconductive pillars 1354. In this implementation, only portions (orstructures) of the redistribution layer 1352 and portions (orstructures) of the conductive pillars 1354 are labeled. In thisimplementation, the redistribution layer 1352 is disposed between thesubstrate 1330 and the conductive pillars 1354 (which can be referred toas a conductive pillar layer).

As shown in FIG. 13A, the interconnection components and semiconductordie 1342 and 1344 are coupled to the redistribution layer 1352. In thisillustration, a molding layer, a surface plating layer, an externalblock, and so forth are not shown.

As shown in FIG. 13A, a plate 1360 (also can be referred to as a thermalplate) is coupled to the semiconductor die 1344. In someimplementations, the plate 1360 can be referred to as a heat slug. Theplate 1360 is aligned along a plane (e.g., plane A4 shown in FIG. 1)that is parallel to a plane along which the semiconductor die 1344 isaligned. In some implementations, the plate 1360 can be coupled to thesemiconductor die 1344 using a solder (e.g., a solder layer), aconductive epoxy, and/or so forth. In some implementations, plate 1360can be deposited on the semiconductor die 1344 using, for example, anelectroplating process, a deposition process, and/or so forth.

The plate 1360 can be configured to transfer heat away (e.g., dissipateheat, conduct heat away) from the semiconductor die 1344. In otherwords, the plate 1360 can function as a heat sink for at least a portionof the semiconductor die 1344. In some implementations, heat can beconducted away from the semiconductor die 1344 using the plate 1360 to,for example, a PCB board to which the plate 1360 is coupled. In someimplementations, heat can be dissipated (or transferred) from thesemiconductor device 1344 in a first direction through the plate 1360and in a second direction (opposite the first direction) from thesemiconductor device 1344 toward the substrate 1330.

In some implementations, the plate 1360 can have a thickness (orvertical dimension) between a few microns and several millimeters (mm)(e.g., 1 mm, 2 mm). In some implementations, the semiconductor die 1344can have a thickness (or vertical dimension) that is relatively thin.Accordingly, the plate 1360 can be coupled to the semiconductor die 1344to support (or add structural rigidity to) the semiconductor die 1344.

In some implementations, the plate 1360 can be a conductive plate thatcan be used to transmit one or more electrical signals from thesemiconductor die 1344 to another device (not shown). For example, theplate 1360 can function as a source contact or pad, as a drain contactor pad, as a gate contact or pad, as a signal contact or pad, or soforth.

As a specific example, the plate 1360 can function as a drain for thesemiconductor die 1344. In some implementations, the plate 1360 canfunction as a common drain for multiple devices (e.g., multiple MOSFETdevices) included in the semiconductor die 1344. For example, the plate1360 can function as a drain for a first MOSFET device (e.g., a firstvertical MOSFET formed using a first plurality of trenches) and theplate 1360 can function as a drain for a second MOSFET device (e.g., asecond vertical MOSFET device formed using a second plurality oftrenches).

In some implementations, the plate 1360 can have dimensions that can beused in conjunction with multiple different die sizes within the device1300. For example, a first plate can have dimensions that can be coupledto a first semiconductor die included in a first device. A second platecan have the same dimensions as the first plate, but can be coupled to asecond semiconductor die included in a second device. Accordingly, thefirst device and the second device can each have a pad layout (based onthe same dimensions of the first plate and the second plate).

In this implementation, the plate 1360 shown as having a surface area(e.g., footprint, outer profile) less than a surface area of thesemiconductor die 1344 (i.e., partial coverage). Accordingly, a portionof the surface area of the semiconductor die 1344 is not covered by theplate 1360. In other words, at least a portion of the semiconductor die1344 is exposed (and can be coupled to another layer such as a moldinglayer). In some implementations, the plate 1360 can have a surface areathat is equal to or greater than the surface area of the semiconductordie 1344 (i.e., full coverage).

In some implementations, more than one plate can be coupled to asemiconductor die (e.g., the semiconductor die 1344). In someimplementations, multiple plates can be coupled to a same side orsurface (e.g., planar surface) of the semiconductor die. In suchimplementations, the plates can be thermally insulated and/orelectrically insulated from one another. For example, a first platecoupled to a semiconductor die can be thermally insulated from and/orelectrically insulated from a second plate coupled to the semiconductordie.

Although not shown in FIG. 13A, a plate (not shown) can be coupled tothe semiconductor die 1346. In such implementations, the plate coupledto the semiconductor die 1346 can be thermally and/or electricallyinsulated from the plate 1360. In some implementations, the plate 1360can be modified so that it can be coupled to the semiconductor die 1344and the semiconductor die 1346.

In some implementations, the plate 1360 can be made of a conductivematerial (e.g., electrically conductive material, a thermally conductivematerial) such as copper, aluminum, gold, a metal alloy, and/or soforth.

Although illustrated a single continuous slug having a rectangularshape, the plate 1360 can have a different shape. In someimplementations, the plate 1360 can be patterned with a specific patternusing one or more processing techniques.

In some implementations, the plate 1360 can be coupled to thesemiconductor die 1344 before the semiconductor die 1344 is included inthe device 1300. In some implementations, the plate 1360 can be coupledto the semiconductor die 1344 after the semiconductor die 1344 isincluded in (e.g., coupled to) the device 1300.

FIG. 13B is a diagram that illustrates a perspective view of the device1300 shown in FIG. 13A with additional processing layers, according toan implementation. As shown in FIG. 13B, the semiconductor die 1344,1346, and the interconnection components are encapsulated within (e.g.,entirely disposed within) molding layer 1320. A top surface of the plate1360 is exposed through the molding layer 1320. In some implementations,the top surface of the plate 1360 can be defined after, for example, amechanical polish process.

As shown in FIG. 13B, a surface plating layer 1356 (or portions thereof)are coupled to one or more of the interconnection components. Only someportions of the surface plating layer 1356 are labeled. The surfaceplating layers 1356 can function as conductors through which othercomponents (e.g., devices, PCB, and/or so forth) can be coupled.

FIG. 14A is a diagram that illustrates a layout view (or plan view) ofthe device 1300 shown in FIGS. 13A and 13B. As illustrated in FIG. 14 A,the plate 1360 has a surface area that is smaller than a surface area ofthe semiconductor die 1344. Because the plate 1360 has a surface areathat is smaller than a surface area of the semiconductor die 1344, asurface area of each of the portions 1356A, 1356B of the surface platinglayer 1356 can be relatively large. Specifically, the surface area ofeach of the portions 1356A, 1356B of the surface plating layer 1356would be smaller, or the overall package size (e.g., footprint) of thedevice 1300 would have to be larger because of the lack of space on thesurface of the device 1300. These features are more clearly illustratedin the side cross-sectional view shown in FIG. 14C.

FIG. 14C illustrates a side cross-sectional view of the device 1300shown in FIG. 14A along line Z1. As shown in FIG. 14C, the portion 1356Bof the surface plating layer 1356 is disposed above (e.g., disposedvertically above) at least a portion of the semiconductor die 1344 suchthat a portion 1320B of the molding layer 1320 is disposed between theportion 1356B of the surface plating layer 1356 and the semiconductordie 1344. This configuration is possible because the plate 1360 iscoupled to only a portion of the semiconductor die 1344. As shown inFIG. 14C, a portion 1320A of the molding layer 1320 is disposed (e.g.,laterally disposed) between the plate 1360 and the portion 1356B of thesurface plating layer 1356. If the plate 1360 were coupled to a largerportion of the semiconductor die 1344, a size (e.g., surface area whenviewed from above) of the portion 1356B of the surface plating layer1356 would have to be decreased or moved laterally within thesemiconductor device 1300 resulting in an increase in an overall size ofthe semiconductor device 1300.

The plate 1360 has an edge 1360A that is offset (e.g., laterally offset)from an edge 1344A of the semiconductor die 1344. In someimplementations, the edge 1360A can offset outside of a surface area(offset to the left in this figure) of the semiconductor die 1344. Insome implementations, the edge 1360A can be aligned (e.g., verticallyaligned) with the edge 1344A of the semiconductor die 1344.

As shown in FIG. 14C, the molding layer 1320, the plate 1360, and thesurface plating layer 1356 collectively define a planar surface (e.g., asubstantially planar surface). In some implementations, the planarsurface can be defined using one or more mechanical modificationprocesses (e.g., a chemical mechanical polishing process). In someimplementations, one or more of the molding layer 1320, the plate 1360and/or the surface plating layer 1356 can have a surface that isdisposed above or below a planar surface associated with the device1300.

As shown in FIG. 14C, the semiconductor die 1344 and the semiconductordie 1346 are coupled to portions of the redistribution layer 1352 via acoupling layer 1380. Similarly, the plate 1360 is coupled to thesemiconductor die 1304 via a coupling layer 1390. The coupling layer1380 and/or the coupling layer 1390 (as mentioned above and inconnection with the figures above) can include one or more of a solder,a conductive epoxy, and are so forth.

The semiconductor die 1344 is disposed between at least a portion of theplate 1360 and at least a portion of the redistribution layer 1352. Asshown in FIG. 14C, a portion 1320C of the molding layer 1320 is disposedbetween a first portion of the redistribution layer 1352 and a secondportion of the redistribution layer 1352.

Although not illustrated in FIG. 14C, the semiconductor die 1346 canhave a vertical dimension (e.g., thickness) that is different than(e.g., greater than, less than) a vertical dimension (e.g., thickness)of the semiconductor die 1344. In some implementations, the verticaldimension of the semiconductor die 1346 can be equal to the verticaldimension of the semiconductor die 1344. In some implementations, theplate 1360 can have a vertical dimension that is different than (e.g.,greater than, less than) a vertical dimension of the semiconductor die1346 and/or the semiconductor die 1344. In some implementations, thevertical dimension of the plate 1360 can be equal to the verticaldimension of the semiconductor die 1346 and/or the semiconductor die1344.

FIG. 14B illustrates a side cross-sectional view of the device 1300shown in FIG. 14A along line Z2. As shown in FIG. 14B, the semiconductordie 1346 is coupled to several portions of the redistribution layer 1352via portions of the coupling layer 1380. As shown in FIG. 14B and inFIG. 14C, conductive pillars 1354 are disposed between the surfaceplating layer 1356 and the redistribution layer 1352.

The implementations and features illustrated in FIGS. 13A through 14 canbe combined with any of the implementations shown and described inconnection with, for example, FIGS. 1 through 12.

Implementations of the various devices (e.g., device 100, device 200,device 300, device 500, device 800, and so forth) (e.g., packages)described herein can be included in a variety of devices or systems.FIG. 15 is a diagram that illustrates the device 100 shown in, forexample, FIG. 1 included in an electronic device 1500. The electronicdevice 1500 can be, or can include, for example, a laptop-type devicewith a traditional laptop-type form factor. In some implementations, theelectronic device 1500 can be, or can include, for example, a wireddevice and/or a wireless device (e.g., Wi-Fi enabled device), acomputing entity (e.g., a personal computing device), a server device(e.g., a web server), a mobile phone, an audio device, a motor controldevice, a power supply (e.g., an off-line power supply), a personaldigital assistant (PDA), a tablet device, e-reader, a television, anautomobile, and/or so forth. In some implementations, the electronicdevice 1500 can be, or can include, for example, a display device (e.g.,a liquid crystal display (LCD) monitor, for displaying information tothe user), a keyboard, a pointing device (e.g., a mouse, a trackpad, bywhich the user can provide input to the computer).

In some implementations, the electronic device 1500 can be, or caninclude, for example, a back-end component, a data server, a middlewarecomponent, an application server, a front-end component, a clientcomputer having a graphical user interface or a Web browser throughwhich a user can interact with an implementation, or any combination ofsuch back-end, middleware, or front-end components. The device 100(and/or the electronic device 1500) described herein may beinterconnected by any form or medium of digital data communication,e.g., a communication network. Examples of communication networksinclude a local area network (LAN) and a wide area network (WAN), e.g.,the Internet.

In some implementations, an apparatus can include a substrate. Theapparatus can include a redistribution layer coupled to the substrateand including a first redistribution layer portion and a secondredistribution layer portion. The apparatus can include a firstsemiconductor die having a first surface coupled to the firstredistribution layer portion. The apparatus can also include a secondsemiconductor die having a first surface coupled to the secondredistribution layer portion where the first semiconductor die has asecond surface separated by a minimum distance from a second surface ofthe second semiconductor die. The apparatus can further include a firstconductor coupled to a third surface of the first semiconductor diewhere the third surface of the first semiconductor die is on a side ofthe first semiconductor die opposite the first surface of the firstsemiconductor die and where the first conductor has a surface area lessthan a surface area of the third surface of the first semiconductor die.The apparatus can include a second conductor coupled to a third surfaceof the second semiconductor die where the third surface of the secondsemiconductor die is on a side of the second semiconductor die oppositethe first surface of the second semiconductor die. The first conductorcan be separated from the second conductor by a distance greater thanthe minimum distance.

In some implementations, the second surface of the first semiconductordie can be aligned parallel to the second surface of the secondsemiconductor die. The apparatus can include an insulator disposed onthe third surface of the first semiconductor die where the surface areaof the first conductor and a surface area of the insulator have acombined surface area substantially equal to the surface area of thethird surface of the first semiconductor die.

In some implementations, the first redistribution layer portion can be afirst capacitive plate of a capacitive component, and the redistributionlayer can be a first redistribution layer coupled to a first side of thesubstrate. The apparatus can include a second redistribution layerincluding a second capacitive plate of the capacitive component. Thefirst semiconductor die can include a first semiconductor devicecapacitively coupled to a second semiconductor device included in thesecond semiconductor device. In some implementations, the firstsemiconductor die can include a high voltage semiconductor device.

In one general aspect, an apparatus can include a first molding layer, asecond molding layer, and a substrate disposed between the first moldinglayer and the second molding layer. The apparatus can include aninductive component having at least a portion coupled to the substrate.The apparatus can include a semiconductor die disposed in the firstmolding layer and including a semiconductor device, the semiconductordevice being electrically coupled to the capacitive component.

In some implementations, the second molding layer includes a magneticsubstance. The inductive component can include a conductive element andcan include at least a portion of the magnetic substance. In someimplementations, the apparatus can include a first capacitive platedisposed in the first molding layer on a first side of the substrate anda second capacitive plate disposed in the second molding layer on asecond side of the substrate.

In some implementations, the semiconductor die is a first semiconductordie and the semiconductor device is a first semiconductor device, andthe first capacitive plate and the second capacitive plate defining atleast a portion of a first capacitor. The apparatus can include a thirdcapacitive plate disposed in the first molding layer on the first sideof the substrate, the second capacitive plate and the third capacitiveplate defining at least a portion of a second capacitor. The apparatuscan include a second semiconductor device including a secondsemiconductor device, and the second semiconductor die can beelectrically coupled to the third capacitive plate.

In some implementations, the semiconductor die is a first semiconductordie and the semiconductor device is a first semiconductor device. Theapparatus can include a second semiconductor die disposed in the firstmolding layer and including a second semiconductor device, and aconductive via disposed in the substrate and electrically coupling thesecond semiconductor device to the second capacitive plate.

In some implementations, the semiconductor die is a first semiconductordie and the semiconductor device is a first semiconductor device. Theapparatus can include a second semiconductor die including a secondsemiconductor device. The second semiconductor die can be disposed inthe first molding layer, and the first semiconductor device can beelectrically isolated from the second semiconductor device via thecapacitive component.

In some implementations, the inductive component is a first inductivecomponent. The apparatus can include a second inductive componentdisposed in the second molding layer, and the first inductive componentand the second inductive component can collectively define atransformer. In some implementations, the second molding layer includesa first molding material, and a second molding material disposed betweenthe first molding material and the substrate. At least the first moldingmaterial can include a magnetic substance. In some implementations, thesubstrate includes a ceramic.

In some implementations, the apparatus can include a plate coupled to atleast a portion of the semiconductor die. In some implementations, theinductive component includes a wire. In some implementations, theapparatus can include an electronic device.

In another general aspect, an apparatus can include a firstredistribution layer disposed on a first side of a substrate, where thefirst redistribution layer includes a first redistribution layer portionand a second redistribution layer portion. The apparatus can include aconductive pillar coupled to the first redistribution layer portion ofthe first redistribution layer, and a semiconductor die can include asemiconductor device coupled to the second redistribution layer portionof the first redistribution layer. The apparatus can include a secondredistribution layer disposed on a second side of the substrate, and thesecond redistribution layer can include at least one of a capacitiveplate of a capacitive component or a portion of an inductive component.The apparatus can include a first molding layer encapsulating at least aportion of the semiconductor die on the first side of the substrate andencapsulating at a least a portion of the first redistribution layer,and a second molding layer disposed on the second side of the substrate.

In some implementations, the second molding layer includes a magneticsubstance. In some implementations, the apparatus can include a surfaceplating layer having a portion aligned along a surface of the firstmolding layer. The first redistribution layer and the conductive pillarcan have a combined thickness substantially equal to a thickness of thefirst molding layer between the substrate and the surface plating layer.

In some implementations, the apparatus can include a surface platinglayer having a portion aligned along a surface of the first moldinglayer. The first redistribution layer and the conductive pillar canextend between the substrate and the surface plating layer.

In some implementations, the capacitive plate is a first capacitiveplate of the capacitive component, and the first redistribution layercan include a portion defining a second capacitive plate of thecapacitive component. The substrate can have a portion defining adielectric between the first capacitive plate and the second capacitiveplate.

In some implementations, the capacitive plate is a first capacitiveplate, and the second redistribution layer portion of the firstredistribution layer is a second capacitive plate. In someimplementations, the second redistribution layer includes a firstportion defining the capacitive plate and a second portion defining theportion of the inductive component.

In some implementations, the conductive pillar is a first conductivepillar, the second redistribution layer including a portion defining theportion of the inductive component. The apparatus can include a secondconductive pillar coupled to the second redistribution layer, and athird redistribution layer including a portion coupled to the secondconductive pillar. The portion of the second redistribution layer, thesecond conductive pillar, and the portion of the third redistributionlayer collectively can define the portion of the inductive component.

In another general aspect, an apparatus can include a substrate, amolding layer disposed on the substrate, and a first semiconductor diedisposed within the molding layer. The apparatus can include a secondsemiconductor die disposed within the molding layer where the secondsemiconductor die has a sidewall separated from a sidewall of the firstsemiconductor die by a first distance. The apparatus can include a firstconductor coupled to a surface of the first semiconductor die andaligned along a plane. In some implementations, the surface of the firstsemiconductor die can be substantially orthogonal to the sidewall of thefirst semiconductor die. The apparatus can also include a secondconductor coupled to a surface of the second semiconductor die andaligned along the plane where the first conductor can be separated fromthe second conductor by a second distance greater than the firstdistance.

In some implementations, the sidewall of the first semiconductor diefaces at least a portion of the sidewall of the second semiconductordie. In some implementations, the apparatus can include an insulatorhaving least a portion aligned along the plane and disposed between thefirst conductor and the second conductor.

In some implementations, the first distance is a minimum distancebetween the sidewall of the first semiconductor die and the sidewall ofthe second semiconductor die. The apparatus can include an insulatorhaving a portion disposed between the first conductor and the secondconductor, and the second distance can be a minimum width of theportion.

In some implementations, the apparatus can include at least onecapacitive plate coupled to the substrate. In some implementations, theapparatus can include the first semiconductor die includes a highvoltage semiconductor device.

In yet another general aspect, a method can include forming aredistribution layer on a substrate using a first electroplatingprocess, and forming a conductive pillar on the redistribution layerusing a second electroplating process. The method can include coupling asemiconductor die to the redistribution layer, and can include forming amolding layer encapsulating at least a portion of the redistributionlayer and at least a portion of the conductive pillar.

In some implementations, the substrate has a rectangular or square shapeand is a ceramic substrate. In some implementations, the redistributionlayer is a first redistribution layer formed on a first side of thesubstrate and including a first capacitive plate. The method can includeforming a second redistribution layer on a second side of the substrateand including a second capacitive plate corresponding to the firstcapacitive plate.

In some implementations, the method can include forming a surfaceplating layer on at least a portion of the semiconductor die and on atleast a portion of the conductive pillar. In some implementations, themethod can include forming a surface plating layer having a portionaligned along a surface of the molding layer. The redistribution layerand the conductive pillar can have a combined thickness substantiallyequal to a thickness of the molding layer between the substrate and thesurface plating layer.

In some implementations, the redistribution layer is a firstredistribution layer form on a first side of the substrate, and themolding layer is a first molding layer formed on the first side of thesubstrate. The method can include forming a second redistribution layeron a second side of the substrate, and forming a second molding layerencapsulating at least a portion of the second redistribution layer.

In some implementations, the redistribution layer is a firstredistribution layer form on a first side of the substrate, and themolding layer is a first molding layer formed on the first side of thesubstrate. The method can include forming a second redistribution layeron a second side of the substrate, and forming a second molding layerencapsulating at least a portion of the second redistribution layer. Thesecond molding layer can include a magnetic substance. In someimplementations, at least a portion of the molding layer includes amagnetic substance. In some implementations, the redistribution layer isa first redistribution layer, and the method can include forming asecond redistribution layer on the first redistribution layer where theforming the conductive pillar includes forming the conductive pillar onthe second redistribution layer.

It may also be understood that when a layer is referred to as being onanother layer or substrate, it can be directly on the other layer orsubstrate, or intervening layers may also be present. It will also beunderstood that when an element, such as a layer, a region, or asubstrate, is referred to as being on, connected to, electricallyconnected to, coupled to, or electrically coupled to another element, itmay be directly on, connected or coupled to the other element, or one ormore intervening elements may be present. In contrast, when an elementis referred to as being directly on, directly connected to or directlycoupled to another element or layer, there are no intervening elementsor layers present. Although the terms directly on, directly connectedto, or directly coupled to may not be used throughout the detaileddescription, elements that are shown in the figures as being directlyon, directly connected or directly coupled can be referred to as such.The claims of the application may be amended to recite exemplaryrelationships described in the specification or shown in the figures.

Some implementations may be implemented using various semiconductorprocessing and/or packaging techniques. Some implementations may beimplemented using various types of semiconductor processing techniquesassociated with semiconductor substrates including, but not limited to,for example, Silicon (Si), Galium Arsenide (GaAs), Silicon Carbide(SiC), and/or so forth.

While certain features of the described implementations have beenillustrated as described herein, many modifications, substitutions,changes and equivalents will now occur to those skilled in the art. Itis, therefore, to be understood that the appended claims are intended tocover all such modifications and changes as fall within the scope of theimplementations. It should be understood that they have been presentedby way of example only, not limitation, and various changes in form anddetails may be made. Any portion of the apparatus and/or methodsdescribed herein may be combined in any combination, except mutuallyexclusive combinations. The implementations described herein can includevarious combinations and/or sub-combinations of the functions,components and/or features of the different implementations described.

1-26. (canceled)
 27. An apparatus, comprising: a first molding layer; asecond molding layer; a substrate disposed between the first moldinglayer and the second molding layer; a first capacitive plate disposed inthe first molding layer on a first side of the substrate; a secondcapacitive plate disposed in the second molding layer on a second sideof the substrate; and a semiconductor die disposed in the first moldinglayer and including a semiconductor device, the semiconductor devicebeing electrically coupled to the first capacitive plate.
 28. Theapparatus of claim 27, wherein the semiconductor die is a firstsemiconductor die and the semiconductor device is a first semiconductordevice, the first capacitive plate and the second capacitive platedefining at least a portion of a first capacitor, the apparatus furthercomprising: a third capacitive plate disposed in the first molding layeron the first side of the substrate, the second capacitive plate and thethird capacitive plate defining at least a portion of a secondcapacitor; and a second semiconductor die including a secondsemiconductor device, the second semiconductor device being electricallycoupled to the third capacitive plate.
 29. The apparatus of claim 27,wherein the semiconductor die is a first semiconductor die and thesemiconductor device is a first semiconductor device, the apparatusfurther comprising: a second semiconductor die disposed in the firstmolding layer and including a second semiconductor device; and aconductive via disposed in the substrate.
 30. The apparatus of claim 27,wherein the first capacitive plate and the second capacitive plate areincluded in a capacitive component, the semiconductor die is a firstsemiconductor die and the semiconductor device is a first semiconductordevice, the apparatus further comprising: a second semiconductor dieincluding a second semiconductor device, the second semiconductor diedisposed in the first molding layer, the first semiconductor devicebeing electrically isolated from the second semiconductor device via thecapacitive component.
 31. The apparatus of claim 27, further comprising:a first inductive component; and a second inductive component disposedin the second molding layer, the first inductive component and thesecond inductive component collectively defining a transformer.
 32. Theapparatus of claim 27, wherein the substrate includes a ceramic.
 33. Theapparatus of claim 27, further comprising: a plate coupled to at least aportion of the semiconductor die.
 34. The apparatus of claim 27, furthercomprising: an inductive component, the second molding layer includes amagnetic substance, the inductive component including a conductiveelement and including at least a portion of the magnetic substance. 35.The apparatus of claim 27, wherein the apparatus is included in anelectronic device.
 36. An apparatus, comprising: a first redistributionlayer disposed on a first side of a substrate, the first redistributionlayer including a first redistribution layer portion and a secondredistribution layer portion; a conductive pillar coupled to the firstredistribution layer portion of the first redistribution layer; asemiconductor die including a semiconductor device coupled to the secondredistribution layer portion of the first redistribution layer; a secondredistribution layer disposed on a second side of the substrate, thesecond redistribution layer including a capacitive plate of a capacitivecomponent; a first molding layer encapsulating at least a portion of thesemiconductor die on the first side of the substrate and encapsulatingat a least a portion of the first redistribution layer; and a secondmolding layer disposed on the second side of the substrate.
 37. Theapparatus of claim 36, wherein the capacitive plate is a firstcapacitive plate of the capacitive component, the first redistributionlayer including a portion defining a second capacitive plate of thecapacitive component, the substrate having a portion defining adielectric between the first capacitive plate and the second capacitiveplate.
 38. The apparatus of claim 36, further comprising: a surfaceplating layer having a portion aligned along a surface of the firstmolding layer, the first redistribution layer and the conductive pillarhaving a combined thickness substantially equal to a thickness of thefirst molding layer between the substrate and the surface plating layer.39. The apparatus of claim 36, further comprising: a surface platinglayer having a portion aligned along a surface of the first moldinglayer, the first redistribution layer and the conductive pillarextending between the substrate and the surface plating layer.
 40. Theapparatus of claim 36, wherein the capacitive plate is a firstcapacitive plate, the second redistribution layer portion of the firstredistribution layer is a second capacitive plate.
 41. The apparatus ofclaim 36, wherein the second redistribution layer includes a firstportion defining the capacitive plate and a second portion defining aportion of an inductive component.
 42. An apparatus, comprising: asubstrate; a first molding layer disposed on a first side of thesubstrate; a second molding layer disposed on a second side of thesubstrate; a first semiconductor die disposed within the first moldinglayer; a second semiconductor die disposed within the first moldinglayer; a first capacitive component electrically coupled to the firstsemiconductor die; and a second capacitive component electricallycoupled to the second semiconductor die, the first capacitive componentand the second capacitive component having a common capacitive platedisposed in the second molding layer on the second side of thesubstrate.
 43. The apparatus of the claim 42, wherein the firstsemiconductor die includes a driver circuit and the second semiconductordie includes a comparator circuit.
 44. The apparatus of the claim 43,wherein the first semiconductor die includes a driver circuit configuredto communicate with the comparator circuit using one-way communication.45. The apparatus of the claim 42, wherein the first semiconductor dieincludes a high voltage semiconductor device.